2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates


By: B. Wagner*, Z. Reitmeier*, J. Park*, D. Bachelor*, D. Zakharov, Z. Liliental-Weber, R. Davis*

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

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