Dale Bachelor

Works (1)

Updated: July 5th, 2023 15:56

2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.

By: B. Wagner n, Z. Reitmeier n, J. Park n, D. Bachelor n, D. Zakharov *, Z. Liliental-Weber *, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018

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