2006 journal article

Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates

Journal of Crystal Growth, 290(2), 504–512.

By: B. Wagner, Z. Reitmeier, J. Park, D. Bachelor, D. Zakharov, Z. Liliental-Weber, R. Davis

Source: NC State University Libraries
Added: August 6, 2018