Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates
JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512.
author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
Source: Web Of Science
Added: August 6, 2018
