2006 journal article
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates
Journal of Crystal Growth, 290(2), 504–512.
By: B. Wagner, Z. Reitmeier, J. Park, D. Bachelor, D. Zakharov*, Z. Liliental-Weber*, R. Davis
