Dale Bachelor

Works (1)

Updated: July 5th, 2023 15:56

2006 article

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006, April 6). Journal of Crystal Growth.

By: B. Wagner n, Z. Reitmeier n, J. Park n, D. Bachelor n, D. Zakharov *, Z. Liliental-Weber *, R. Davis n

author keywords: atomic force microscopy; crystal morphology; surfaces; metalorganic chemical vapor deposition; pendeo-epitaxy; nitrides; semiconducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

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