We present metalorganic chemical vapor deposition-grown III-nitride tunnel junction (TJ) devices showing negative differential resistance (NDR) under forward bias with a peak to valley ratio of 1.3 at room temperature. Previously, NDR in GaN material systems has only been achievable utilizing molecular beam epitaxy or polarization enhanced AlGaN interlayers. The TJ devices presented here utilize structures based on p+InGaN/n+InGaN materials with the n-side of the junction doped with both Si and Mg and with electron and hole concentrations roughly in the 1019 cm−3 range. The Mg precursor flow is maintained at a constant rate during the whole TJ growth. This co-doped technique can eliminate several Mg-related issues such as delayed incorporation, the memory effect, and Mg solid-state diffusion. Structures grown on relaxed InGaN semibulk templates show enhanced hole concentrations and improved TJ performance.