Mostafa Abdelhamid

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 125(8).

Improved LED output power and external quantum efficiency using InGaN templates

APPLIED PHYSICS LETTERS, 120(8).

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

SUPERLATTICES AND MICROSTRUCTURES, 160.

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3).

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.