Mostafa Abdelhamid

College of Engineering

Works (8)

Updated: July 5th, 2023 15:21

2022 journal article

Improved LED output power and external quantum efficiency using InGaN templates

APPLIED PHYSICS LETTERS, 120(8).

By: M. Abdelhamid n, E. Routh n, B. Hagar n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 4, 2022

2022 journal article

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

By: B. Hagar n, M. Abdelhamid n, E. Routh n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2022

2021 journal article

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

By: E. Routh n, M. Abdelhamid n, P. Colter n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 21, 2022

2021 journal article

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

SUPERLATTICES AND MICROSTRUCTURES, 160.

By: M. Abdelhamid n, E. Routh n, A. Shaker n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Green LEDs; Relaxed InGaN templates; MOCVD; InGaN quantum wells
Sources: Web Of Science, ORCID
Added: November 15, 2021

2021 journal article

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3).

By: M. Abdelhamid*, E. Routh* & S. Bedair*

author keywords: InGaN; multiple quantum wells; MOCVD
Sources: Web Of Science, ORCID
Added: March 8, 2021

2020 journal article

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).

By: E. Routh n, M. Abdelhamid n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: September 7, 2020

2020 journal article

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

By: T. Eldred n, M. Abdelhamid n, J. Reynolds n, N. El-Masry n, J. LeBeau n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: April 6, 2020

2019 journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid n, J. Reynolds n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: InGaN relaxation; Metal Organic Chemical Vapor Deposition (MOCVD); InGaN semibulk; Multiple quantum wells (MQWs); High resolution X-ray diffraction (HRXRD); Nitrides
Source: Web Of Science
Added: June 24, 2019

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