Srivardhan Shivappa Gowda

A molecular memory device formed by HfO2 encapsulation of redox-active molecules

APPLIED PHYSICS LETTERS, 91(17).

Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

APPLIED PHYSICS LETTERS, 90(14).

Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 5(3), 258–264.

Approach for investigating lateral conduction in self-assembled monolayers

APPLIED PHYSICS LETTERS, 87(26).

Hybrid molecular memory devices and methods of use thereof

Washington, DC: U.S. Patent and Trademark Office.

Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 4(2), 278–283.

Redox-active monolayers on nano-scale silicon electrodes

NANOTECHNOLOGY, 16(2), 257–261.

Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon

ADVANCED MATERIALS, 16(2), 133-+.

Multiple-bit storage properties of porphyrin monolayers on SiO2

APPLIED PHYSICS LETTERS, 85(10), 1829–1831.

Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications

APPLIED PHYSICS LETTERS, 83(1), 198–200.