Dakota Anne Gray-Boneker

College of Engineering

Works (2)

Updated: December 8th, 2025 10:39

2025 article

(Invited) Development of Bipolar Semiconductor Devices for a III-N Material System

Yates, L., Loveless, J., Meyers, V., Rice, A., Steinfeldt, J., Vuong, H. M., … Kaplar, R. J. (2025, November 24). ECS Meeting Abstracts.

By: L. Yates *, J. Loveless *, V. Meyers *, A. Rice*, J. Steinfeldt *, H. Vuong*, M. Negoita *, L. Miroshnik * ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries
Added: December 5, 2025

2025 article

Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

Xue, H., Palmese, E., Sekely, B. J., Gray-Boneker, D., Gonzalez, A., Rogers, D. J., … Wierer, J. J., Jr. (2025, January 6). Journal of Crystal Growth, Vol. 652.

By: H. Xue n, E. Palmese n, B. Sekely n, D. Gray-Boneker n, A. Gonzalez n, D. Rogers n, B. Little n, F. Kish n, J. Muth n , J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: February 10, 2025

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