Daniel Rogers

College of Engineering

Works (4)

Updated: February 14th, 2025 10:36

2025 article

Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

Xue, H., Palmese, E., Sekely, B. J., Gray-Boneker, D., Gonzalez, A., Rogers, D. J., … Wierer, J. J., Jr. (2025, January 6). Journal of Crystal Growth, Vol. 652.

By: H. Xue n, E. Palmese n, B. Sekely n, D. Gray-Boneker n, A. Gonzalez n, D. Rogers n, B. Little n, F. Kish n, J. Muth n, J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: February 10, 2025

2024 article

Comment on “Structural and optical characterization of thin AlInN films on c-plane GaN substrates” [J. Appl. Phys. 134, 075301 (2023)]

Rogers, D. J., Xue, H., Palmese, E., & Wierer, J. J. (2024, October 24). Journal of Applied Physics, Vol. 136.

By: D. Rogers n, H. Xue n, E. Palmese  n & J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; ZnO doping and properties
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 24, 2024

2024 article

High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400  ∘ C

Rogers, D. J., Xue, H., Kish, F. A., Hsiao, F.-C., Pezeshki, B., Tselikov, A., & Wierer, J. J. (2024, July 29). IEEE Photonics Technology Letters.

By: D. Rogers n, H. Xue n, F. Kish n, F. Hsiao n, B. Pezeshki, A. Tselikov, J. Wierer n 

author keywords: Bandwidth; Temperature measurement; Current density; Modulation; Light emitting diodes; Temperature; Vertical cavity surface emitting lasers; GaN; micro light-emitting diodes (micro-LEDs); modulation; optical communication; differential carrier lifetime
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 1, 2024

2024 article

Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times

Palmese, E., Xue, H., Rogers, D. J., & Wierer, J. J. (2024, August 7). IEEE Electron Device Letters, Vol. 45, pp. 1903–1906.

By: E. Palmese n, H. Xue n, D. Rogers n & J. Wierer n 

author keywords: Enhancement-mode HEMTs; light triggered; AlInN/GaN; AlInN oxidation
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 8, 2024

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.