Works Published in 1981

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Displaying all 10 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1981 journal article

The XSYS Data Acquisition System at Triangle Universities Nuclear Laboratory

IEEE Transactions on Nuclear Science, 28(5), 3708–3714.

By: C. Gould n , L. Holzsweig, S. King, Y. Lau, R. Poore, N. Roberson, S. Wender

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: August 12, 2023

1981 journal article

Neutron Scattering Experiments at Triangle Universities Nuclear Laboratory

IEEE Transactions on Nuclear Science, 28(2), 1264–1267.

By: C. Gould n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: August 12, 2023

1981 journal article

Data Acquisition with a VAX 11/780 and MBD Branch Driver

IEEE Transactions on Nuclear Science, 28(5), 3822–3827.

By: S. King*, Y. Lau* & C. Gould n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: August 12, 2023

1981 journal article

Multiple Scattering of Protons and Deuterons by Thick Foils

IEEE Transactions on Nuclear Science, 28(2), 1295–1297.

By: D. Dixon*, G. Jensen*, S. Morrill*, C. Connors*, R. Walter*, C. Gould* , P. Thambiduria*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: August 12, 2023

1981 conference paper

Theory of Point Defects and Deep Impurities in Semiconductors

In R. R. Hasiguti (Ed.), Defects and radiation effects in semiconductors, 1980 : invited and contributed papers from the eleventh International Conference on Defects and Radiation Effects in Semiconductors held in Oiso, Japan, 8-11 September 1980. Bristol: Institute of Physics.

By: J. Bernholc , N. Lipari, S. Pantelides & M. Scheffler

Ed(s): R. Hasiguti

Event: International Conference on Defects and Radiation Effects in Semiconductors at Oiso, Japan on September 8-11, 1980

Source: NC State University Libraries
Added: December 30, 2020

1981 journal article

Identification and Properties of Defects in GaP

Physical Review Letters, 47(6), 413–416.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: December 24, 2020

1981 journal article

The electronic structure of deep SP-bonded acceptor impurities in semiconductors

Solid State Communications, 37(9), 705–708.

By: J. Bernholc* , S. Pantelides *, N. Lipari* & A. Baldereschi*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: December 24, 2020

1981 journal article

THE ELECTRONIC STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS SILICON

Le Journal De Physique Colloques, 42(C4), C4–137-C4–140.

By: D. DiVincenzo *, J. Bernholc*  & M. Brodsky*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Crossref, ORCID
Added: August 31, 2020

1981 conference paper

Hole conductivity through neighboring Si-H bonds in hydrogenated silicon

AIP Conference Proceedings. Presented at the AIP Conference Proceedings Volume 73.

By: D. DiVincenzo *, J. Bernholc* , M. Brodsky*, N. Lipari* & S. Pantelides *

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Event: AIP Conference Proceedings Volume 73

Sources: Crossref, ORCID
Added: August 31, 2020

1981 journal article

SOME TOPICS IN THE MOLECULAR-DYNAMICS ENSEMBLE

JOURNAL OF CHEMICAL PHYSICS, 75(11), 5461–5463.

By: F. Lado n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, ORCID
Added: August 6, 2018