Physics

Impurity Induced States in Amorphous Hydrogenated Silicon

Journal of Electronic Materials, 14a, 781.

Electronic structure of thiomolybdates (MoS42- and Mo3S92-

Inorganic Chemistry, 24(9), 1323–1330.

Modeling of defects in amorphous semiconductors: Threefold coordination in a-Si:H

Journal of Non-Crystalline Solids, 75(1-3), 305–310.

Low defect density Si,Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes

Journal of Non-Crystalline Solids, 77 & 78, 885–889.

Physics lab helpware

Englewood Cliffs, NJ: Prentice-Hall.

Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components

Washington, DC: U.S. Patent and Trademark Office.

TEST OF A SIMPLE ANALYTIC MODEL FOR FLUIDS OF HARD LINEAR-MOLECULES

MOLECULAR PHYSICS, 54(2), 407–413.

Cylindrical grating monochromator for synchrotron radiation

Washington, DC: U.S. Patent and Trademark Office.

CHARACTERIZATION OF THE MICROSTRUCTURE OF DISTRIBUTIONS OF RIGID RODS AND DISKS IN A MATRIX

JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 18(1), 141–148.

HYDROGEN LOCALIZATION NEAR BORON IN SILICON

APPLIED PHYSICS LETTERS, 46(4), 421–423.