Physics

Influence of Surface Melting Characteristics on the Wetting Behavior of Solid Adsorbed Films

Langmuir, 5(3), 567–570.

Roughness and porosity characterization of carbon and magnetic films through adsorption isotherm measurements

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 7(3), 2481–2485.

Multilayer adsorption on a fractally rough surface

Physical Review Letters, 62(17), 1997–2000.

Measurement of protein hydration shells using a quartz microbalance

Physical Review Letters, 63(16), 1743–1746.

Fundamental Symmetry Studies at Los Alamos using Epithermal Neutrons

In J. N. Ginocchio & S. P. Rosen (Eds.), Fundamental Symmetries and Nuclear Structure (p. 1). Singapore: World Scientific.

Search for Parity and Time Reversal Symmetry Violation Using Polarized Neutron-Nuclear Scattering

In W. D. Ramsey & W. T. Van Oers (Eds.), Proceedings of the Symposium on Spin and Symmetries (p. 113).

EXPERIMENTS ON ELECTRON IMPACT EXCITATION AND DIELECTRONIC RECOMBINATION AT HARVARD-SMITHSONIAN

Le Journal De Physique Colloques, 50(C1), C1–405-C1–409.

Higher moments of the fluctuatingS-matrix within the stochastic model for compound-nucleus scattering

Zeitschrift f�r Physik A Atomic Nuclei, 332(4), 427–441.

Systematic nuclear sensitivity to time reversal noninvariance

Physics Letters B, 226(3-4), 197–201.

epic Grass - symbolic calculations with anticommuting variables

Computer Physics Communications, 54(2-3), 353–369.

Pressure and Strain Effects on Diffusion

In D. J. Wolford, J. Bernholc, & E. E. Haller (Eds.), Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures (Vol. 163, p. 523).

Native Defects, Diffusion, Self-Compensation, and Boron Doping in Cubic Silicon Carbide

MRS Proceedings, 162.

N-Type Doping and Diffusion of Impurities in Diamond

MRS Proceedings, 162.

Herbig-Haro objects as the heads of radiative jets

The Astrophysical Journal, 337, L37.

The growth of density perturbations in radiative shocks

The Astrophysical Journal, 345, 853.

Pressure effects on self-diffusion in silicon

Physical Review B, 40(15), 10643–10646.

Defect Abundances and Diffusion Mechanisms in Diamond, SiC, Si and Ge

In Atomistic Simulation of Materials (pp. 33–39).

Structural and electronic properties of arsenic chalcogenide molecules

Physical Review B, 39(15), 10831–10838.

The shapes of first‐stage sinters

Journal of Applied Physics, 65(8), 3219–3225.

Experimental observation of crisis-induced intermittency and its critical exponent

Physical Review Letters, 63(9), 923–926.