Physics

EXPERIMENTS ON ELECTRON IMPACT EXCITATION AND DIELECTRONIC RECOMBINATION AT HARVARD-SMITHSONIAN

Le Journal De Physique Colloques, 50(C1), C1–405-C1–409.

Higher moments of the fluctuatingS-matrix within the stochastic model for compound-nucleus scattering

Zeitschrift f�r Physik A Atomic Nuclei, 332(4), 427–441.

Systematic nuclear sensitivity to time reversal noninvariance

Physics Letters B, 226(3-4), 197–201.

epic Grass - symbolic calculations with anticommuting variables

Computer Physics Communications, 54(2-3), 353–369.

Pressure and Strain Effects on Diffusion

In D. J. Wolford, J. Bernholc, & E. E. Haller (Eds.), Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures (Vol. 163, p. 523).

Native Defects, Diffusion, Self-Compensation, and Boron Doping in Cubic Silicon Carbide

MRS Proceedings, 162.

N-Type Doping and Diffusion of Impurities in Diamond

MRS Proceedings, 162.

Herbig-Haro objects as the heads of radiative jets

The Astrophysical Journal, 337, L37.

The growth of density perturbations in radiative shocks

The Astrophysical Journal, 345, 853.

Pressure effects on self-diffusion in silicon

Physical Review B, 40(15), 10643–10646.

Defect Abundances and Diffusion Mechanisms in Diamond, SiC, Si and Ge

In Atomistic Simulation of Materials (pp. 33–39).

Structural and electronic properties of arsenic chalcogenide molecules

Physical Review B, 39(15), 10831–10838.

The shapes of first‐stage sinters

Journal of Applied Physics, 65(8), 3219–3225.

Experimental observation of crisis-induced intermittency and its critical exponent

Physical Review Letters, 63(9), 923–926.

Reduction of defects by high temperature (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon

Journal of Non-Crystalline Solids, 114.

Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD

Journal of Vacuum Science & Technology, A(7), 1124–1129.

Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology, A(7), 1115–1123.

Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence

Journal of Non-Cyrstalline Solids, 114.

Defects in a-Si:H films produced by remote plasma enhanced CVD

Journal of Non-Crystalline Solids, 107, 295–300.

The Conference on Computers in Physics Instruction proceedings

Redwood City, Calif: Addison-Wesley.