College of Sciences
Displaying works 1 - 20 of 27 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1989 journal article
EXPERIMENTS ON ELECTRON IMPACT EXCITATION AND DIELECTRONIC RECOMBINATION AT HARVARD-SMITHSONIAN
Le Journal De Physique Colloques, 50(C1), C1–405-C1–409.
1989 journal article
Higher moments of the fluctuatingS-matrix within the stochastic model for compound-nucleus scattering
Zeitschrift f�r Physik A Atomic Nuclei, 332(4), 427–441.
1989 journal article
Systematic nuclear sensitivity to time reversal noninvariance
Physics Letters B, 226(3-4), 197–201.
1989 journal article
epic Grass - symbolic calculations with anticommuting variables
Computer Physics Communications, 54(2-3), 353–369.
1989 conference paper
Pressure and Strain Effects on Diffusion
In D. J. Wolford, J. Bernholc, & E. E. Haller (Eds.), Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures (Vol. 163, p. 523).
Ed(s): D. Wolford, J. Bernholc & E. Haller
Event: Materials Research Society Symposium
1989 journal article
Native Defects, Diffusion, Self-Compensation, and Boron Doping in Cubic Silicon Carbide
MRS Proceedings, 162.
1989 conference paper
N-Type Doping and Diffusion of Impurities in Diamond
MRS Proceedings, 162.
1989 journal article
Herbig-Haro objects as the heads of radiative jets
The Astrophysical Journal, 337, L37.
1989 journal article
The growth of density perturbations in radiative shocks
The Astrophysical Journal, 345, 853.
1989 journal article
Pressure effects on self-diffusion in silicon
Physical Review B, 40(15), 10643–10646.
1989 chapter
Defect Abundances and Diffusion Mechanisms in Diamond, SiC, Si and Ge
In Atomistic Simulation of Materials (pp. 33–39).
1989 journal article
Structural and electronic properties of arsenic chalcogenide molecules
Physical Review B, 39(15), 10831–10838.
1989 journal article
The shapes of first‐stage sinters
Journal of Applied Physics, 65(8), 3219–3225.
1989 journal article
Experimental observation of crisis-induced intermittency and its critical exponent
Physical Review Letters, 63(9), 923–926.
1989 journal article
Reduction of defects by high temperature (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon
Journal of Non-Crystalline Solids, 114.
1989 journal article
Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD
Journal of Vacuum Science & Technology, A(7), 1124–1129.
1989 journal article
Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition
Journal of Vacuum Science & Technology, A(7), 1115–1123.
1989 journal article
Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence
Journal of Non-Cyrstalline Solids, 114.
1989 journal article
Defects in a-Si:H films produced by remote plasma enhanced CVD
Journal of Non-Crystalline Solids, 107, 295–300.
1989 book
The Conference on Computers in Physics Instruction proceedings
Redwood City, Calif: Addison-Wesley.