Physics

Absolute Rate Coefficient for C3+ (2s-2p) Electron Impact Excitation

Physical Review A, 51(3), 2162.

Laser oriented K36 for time reversal symmetry measurements

Physical Review C, 52(2), R464–R467.

In situ absolute calibration of a channel electron multiplier for detection of positive ions

Review of Scientific Instruments, 66(1), 67–71.

Search for Narrow Sum-Energy Lines in Electron-Positron Pair Emission from Heavy-Ion Collisions near the Coulomb Barrier

Physical Review Letters, 75(14), 2658–2661.

Why video?

Physics Courseware Communicator, 3(1), 9.

A model for computers in the high school physics classroom

In Physics Courseware Evaluation Project. Raleigh, NC: North Carolina State University.

Support of physics education research as a subfield of physics

[White Paper]. Alexandria, VA: National Science Foundation, Physics Division.

Theory and simulations of nanotube growth

Electrochemical Society Proceedings, 95, 108. Pennington, NJ: Electrochemical Society.

Large Scale Electronic Structure Calculations Using Multigrid Methods

In A. Tentner (Ed.), High performance computing 1995 - "grand challenges in computer simulation" : proceedings of the 1995 Simulation Multiconference, April 9-13, 1995, The Crescent Hotel at Koll Center, Phoenix, Arizona. (p. 153). San Diego, California: The Society for Computer Simulation.

Molecular Dynamics Studies of Nanotube Growth in a Carbon Arc

MRS Online Proceedings: Symposium G – Science and Technology of Fullerene Materials, 359, 235.

Theory Of Diffusion In Gaas/AlAs Superlattices

In D. J. Lockwood (Ed.), 22nd International Conference on the Physics of Semiconductors : Vancouver, Canada, August 15-19, 1994 (p. 2259). Singapore: World Scientific.

Theory Of Growth Of Graphitic Nanotubes

In D. J. Lockwood (Ed.), 22nd International Conference on the Physics of Semiconductors : Vancouver, Canada, August 15-19, 1994 (p. 2065). Singapore: World Scientific.

Ab Initio Studies of Si (100) Steps of Monoatomic Height: Structure and Diffusion Barriers

In D. J. Lockwood (Ed.), 22nd International Conference on the Physics of Semiconductors : Vancouver, Canada, August 15-19, 1994 (p. 493). Singapore: World Scientific.

Theory of Native Defects and of Carbon Doping in Wurtzite GaN

In D. J. Lockwood (Ed.), 22nd International Conference on the Physics of Semiconductors : Vancouver, Canada, August 15-19, 1994 (p. 2331). Singapore: World Scientific.

Dynamics: Numerical Explorations

Physics Today, 48(7), 57–57.

Towards the Identification of the Dominant Donor in GaN

Physical Review Letters, 75(2), 296–299.

Fluorine-Based Mechanisms for Atomic-Layer-Epitaxial Growth on Diamond (110)

Physical Review Letters, 74(24), 4875–4878.

Ab Initio Studies of the Diffusion Barriers at Single-Height Si(100) Steps

Physical Review Letters, 75(1), 101–104.

Wind dynamics in SMC X-1. 2: GINGA and ROSAT observations

The Astrophysical Journal, 445, 896.

Hydrodynamic simulations of the mass transfer in Algol

The Astrophysical Journal, 445, 939.