2015 journal article
Reliable antifuse one-time-programmable scheme with charge pump for postpackage repair of DRAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23(9), 1956–1960.
2005 patent
High/low work function metal alloys for integrated circuit electrodes
Washington, DC: U.S. Patent and Trademark Office.
2005 journal article
Properties of Ta-Mo alloy gate electrode for n-MOSFET
JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695.
2004 patent
Method for forming a field effect transistor having a high-k gate dielectric and related structure
Washington, DC: U.S. Patent and Trademark Office.
2002 journal article
Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS
IEEE ELECTRON DEVICE LETTERS, 23(6), 354–356.
2001 journal article
Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics
APPLIED PHYSICS LETTERS, 78(8), 1134–1136.
2001 article
Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics
Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498.
2001 article
N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics
Misra, V., Kulkarni, M., & Zhong, H. C. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1499–1505.
2001 journal article
Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2
Applied Physics Letters, 78(26), 4166–4168.
2000 journal article
Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS
IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595.
