Works (10)

Updated: April 11th, 2023 10:13

2015 journal article

Reliable antifuse one-time-programmable scheme with charge pump for postpackage repair of DRAM

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23(9), 1956–1960.

By: X. Li, H. Zhong, Z. Tang & C. Jia

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

High/low work function metal alloys for integrated circuit electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: V. Misra, H. Zhong & S. Hong

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Properties of Ta-Mo alloy gate electrode for n-MOSFET

JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695.

By: C. Lee*, J. Kim, S. Hong*, H. Zhong, B. Chen & V. Misra

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 patent

Method for forming a field effect transistor having a high-k gate dielectric and related structure

Washington, DC: U.S. Patent and Trademark Office.

By: J. Jeon & H. Zhong

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 23(6), 354–356.

By: V. Misra, H. Zhong & H. Lazar

author keywords: advanced gatestacks; CMOS; gate electrodes; metal alloy; metal gates; MOS transistors; Ru, Ru-Ta, Ta
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

APPLIED PHYSICS LETTERS, 78(8), 1134–1136.

By: H. Zhong, G. Heuss, V. Misra, H. Luan, C. Lee & D. Kwong

Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498.

By: H. Zhong, G. Heuss, Y. Suh n, V. Misra & S. Hong*

author keywords: Ru; RuO2; ZrO2; Zr-silicate; MOS; dielectrics; gate electrodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 article

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Misra, V., Kulkarni, M., & Zhong, H. C. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1499–1505.

By: V. Misra, M. Kulkarni n & H. Zhong

author keywords: hafnium-doped SiO2 films; interfacial properties; NMOS; PMOS; MOS-capacitor
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Applied Physics Letters, 78(26), 4166–4168.

By: V. Misra, G. Heuss & H. Zhong

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2000 journal article

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595.

By: H. Zhong, G. Heuss & V. Misra

author keywords: advanced gatestacks; CMOS; conducting oxides; gate electrodes; metal gates; MOS capacitors; RuO2
Sources: Web Of Science, ORCID
Added: August 6, 2018