Huicai Zhong

Reliable antifuse one-time-programmable scheme with charge pump for postpackage repair of DRAM

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 23(9), 1956–1960.

High/low work function metal alloys for integrated circuit electrodes

Washington, DC: U.S. Patent and Trademark Office.

Properties of Ta–Mo alloy gate electrode for n-MOSFET

Lee, C. K., Kim, J. Y., Hong, S. N., Zhong, H., Chen, B., & Misra, V. (2005, May 1). Journal of Materials Science, Vol. 40, pp. 2693–2695.

Method for forming a field effect transistor having a high-k gate dielectric and related structure

Washington, DC: U.S. Patent and Trademark Office.

Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

Misra, V., Zhong, N. H., & Lazar, H. (2002, June 1). IEEE Electron Device Letters, Vol. 23, pp. 354–356.

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Zhong, H., Heuss, G., Misra, V., Luan, H., Lee, C.-H., & Kwong, D.-L. (2001, February 19). Applied Physics Letters, Vol. 78, pp. 1134–1136.

Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Zhong, H., Heuss, G., Suh, Y.-S., Misra, V., & Hong, S.-N. (2001, December 1). Journal of Electronic Materials, Vol. 30, pp. 1493–1498.

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Misra, V., Kulkarni, M., & Zhong, H. (2001, December 1). Journal of Electronic Materials, Vol. 30, pp. 1499–1505.

Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2

Misra, V., Heuss, G. P., & Zhong, H. (2001, June 25). Applied Physics Letters, Vol. 78, pp. 4166–4168.

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS

Zhong, H., Heuss, G., & Misra, V. (2000, December 1). IEEE Electron Device Letters, Vol. 21, pp. 593–595.