Saurabh Chopra

Erbium Silicide Formation on Si1-xCx Epitaxial Layers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383.

Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices

Washington, DC: U.S. Patent and Trademark Office.

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

APPLIED PHYSICS LETTERS, 90(19).

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

APPLIED PHYSICS LETTERS, 91(14).

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

APPLIED PHYSICS LETTERS, 88(20).

Carbon nanotube based resonant-circuit sensor

Washington, DC: U.S. Patent and Trademark Office.

Critical thickness of heavily boron-doped silicon-germanium alloys

APPLIED PHYSICS LETTERS, 89(20).