Works (86)

2015 journal article

Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing

Electronic Materials Letters, 11(4), 658–663.

By: Y. Park, J. Lu, J. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

The influence of hydrogenation on the electrical properties of impurity-contaminated silicon grain boundaries

Electronic Materials Letters, 11(6), 993–997.

By: Y. Park, J. Lu, J. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Molybdenum nano-precipitates in silicon: A TEM and DLTS study

Physica Status Solidi. B, Basic Solid State Physics, 251(11), 2201–2204.

By: S. Leonard, V. Markevich, A. Peaker, B. Hamilton, K. Yousseff & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Thermal misfit strain relaxation in Ge/(001)Si heterostructures

Journal of Electronic Materials, 43(9), 3196–3203.

By: J. Bharathan, H. Zhou, J. Narayan, G. Rozgonyi & G. Bulman

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Defect characterization in Ge/(001)Si epitaxial films grown by reduced-pressure chemical vapor deposition

Journal of Electronic Materials, 42(10), 2888–2896.

By: J. Bharathan, J. Narayan, G. Rozgonyi & G. Bulman

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Effect of oxygen and associated residual stresses on the mechanical properties of high growth rate Czochralski silicon

Journal of Applied Physics, 113(13).

By: K. Youssef, M. Shi, C. Radue, E. Good & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Fracture strength of photovoltaic silicon wafers evaluated using a controlled flaw method

Advanced Engineering Materials, 15(8), 756–760.

By: M. Shi, K. Youssef & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates

Physica Status Solidi. A, Applications and Materials Science, 210(9), 1828–1831.

By: T. Jiang, X. Yu, X. Gu, G. Rozgonyi & D. Yang

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Poisson ratio of epitaxial germanium films grown on silicon

Journal of Electronic Materials, 42(1), 40–46.

By: J. Bharathan, J. Narayan, G. Rozgonyi & G. Bulman

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Applied Physics Letters, 101(22).

By: Y. Yoon, Y. Yan, N. Ostrom, J. Kim & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon

Journal of Applied Physics, 111(3).

By: Y. Yoon, B. Paudyal, J. Kim, Y. Ok, P. Kulshreshtha, S. Johnston, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 article

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012)

Journal of Applied Physics, Vol. 111.

By: Y. Yoon, B. Paudyal, J. Kim, Y. Ok, P. Kulshreshtha, S. Johnston, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon

Solar Energy Materials and Solar Cells, 96(1), 166–172.

By: P. Kulshreshtha, K. Youssef & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Oxygen precipitation related stress-modified crack propagation in high growth rate Czochralski silicon wafers

Journal of the Electrochemical Society, 159(2), H125–129.

By: P. Kulshreshtha, Y. Yoon, K. Youssef, E. Good & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Understanding the effect of impurities and grain boundaries on mechanical behavior of Si via nanoindentation of (110)/(100) direct Si bonded wafers

Journal of Materials Research, 27(1), 349–355.

By: K. Youssef, X. Yu, M. Seacrist & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Effect of Au contamination on the electrical characteristics of a "model" small-angle grain boundary in n-type direct silicon bonded wafer

Journal of Applied Physics, 108(5).

By: X. Yu, X. Li, R. Fan, D. Yang, M. Kittler, M. Reiche, M. Seibt, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Effect of nickel contamination on grain boundary states at a direct silicon bonded (110)/(100) interface

Scripta Materialia, 63(11), 1100–1103.

By: X. Li, X. Yu, L. Song, D. Yang & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films

Microelectronic Engineering, 87(11), 2230–2233.

By: Y. Yoon, S. Yi, J. Yim, J. Lee, G. Rozgonyi & Y. Joo

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Modulation of 1.5 mu m dislocation-related luminescence emitted from a direct silicon bonded interface by external bias

Applied Physics Letters, 96(21).

By: X. Yu, L. Song, D. Yang, M. Kittler & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary

Electronic Materials Letters, 6(1), 1–5.

By: Y. Park, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers

Journal of Applied Physics, 105(1).

By: Y. Park, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

By: J. Lu, X. Yu, Y. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Applied Physics Letters, 94(22).

By: X. Yu, J. Lu, K. Youssef & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Applied Physics Letters, 92(26).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries

Applied Physics Letters, 92(8).

By: J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)

Materials Science in Semiconductor Processing, 11(1), 20–24.

By: J. Lu, G. Rozgonyi & A. Schonecker

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures

Journal of Applied Physics, 103(7).

By: J. Lu, Y. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary

Semiconductor Science and Technology, 23(12).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures

Journal of Applied Physics, 104(7).

By: J. Lu, G. Rozgonyi, M. Seacrist, M. Chaumont & A. Campion

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

Journal of Applied Physics, 104(11).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure

Journal of Applied Physics, 103(10).

By: R. Zhang, G. Rozgonyi, E. Yakimov, N. Yarykin & M. Seacrist

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer

Applied Physics Letters, 91(17).

By: J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces

Applied Physics Letters, 90(11).

By: M. Wagener, R. Zhang, G. Rozgonyi, M. Seacrist & M. Ries

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

EBIC characterization of strained Si/SiGe heterostructures

Semiconductors and Semimetals, 41(4), 402–406.

By: E. Yakimov, R. Zhang, G. Rozgonyi & M. Seacrist

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Passivation of hybrid-orientation direct silicon bonded interfaces

Physica. B, Condensed Matter, 401, 564–567.

By: M. Wagener, M. Seacrist & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

Applied Physics Letters, 90(19).

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching

Journal of the Electrochemical Society, 153(11), G986–991.

By: J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

A new understanding of near-threshold damage for 200 keV irradiation in silicon

Journal of Materials Science, 40(14), 3639–3650.

By: N. Stoddard, G. Duscher, W. Windl & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2005 conference paper

EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon

Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd.

By: J. Lu, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Electrical, structural, and chemical analysis of defects in epitaxial SiGe-based heterostructures

Journal of the Electrochemical Society, 152(5), C310–315.

By: K. Bray, W. Zhao, L. Kordas, R. Wise, M. Robinson & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon

Journal of Applied Physics, 97(3).

By: J. Lu, G. Rozgonyi, A. Schonecker, A. Gutjahr & Z. Liu

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

Journal of Applied Physics, 97(8).

By: N. Stoddard, G. Duscher, A. Karoui, F. Stevie & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104.

By: F. Karoui, A. Karoui, G. Rozgonyi, M. Hourai & K. Sueoka

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.

By: G. Rozgonyi, J. Lu, R. Zhang, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Investigation of foreign particles in polycrystalline silicon using infrared microscopy

Solar Energy Materials and Solar Cells, 82(4), 577–585.

By: R. Zhang, E. Van Dyk, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Oxygen precipitate denuded zone in polycrystalline sheet silicon

Applied Physics Letters, 85(7), 1178–1180.

By: J. Lu, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

Journal of Applied Physics, 96(6), 3255–3263.

By: A. Karoui, F. Karoui, G. Rozgonyi & D. Yang

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling

Journal of Applied Physics, 96(6), 3264–3271.

By: A. Karoui & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Secondary phase inclusions in polycrystalline sheet silicon

Journal of Crystal Growth, 269(2/4), 599–605.

By: J. Lu, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Umbrella-like precipitates in nitrogen-doped Czochralski silicon wafers

Applied Physics Letters, 84(11), 1889–1891.

By: A. Kvit, A. Karoui, G. Duscher & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Journal of Applied Physics, 94(1), 140–144.

By: J. Lu, M. Wagener, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

Applied Physics Letters, 83(7), 1367–1369.

By: A. Kvit, R. Yankov, G. Duscher, G. Rozgonyi & J. Glasko

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

Electrochemical and Solid State Letters, 6(11), G134–136.

By: N. Stoddard, A. Karoui, G. Duscher, A. Kvit & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

Microelectronic Engineering, 66(1-4), 305–313.

By: G. Rozgonyi, A. Karoui, A. Kvit & G. Duscher

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

Journal of the Electrochemical Society, 150(12), G771–777.

By: A. Karoui, F. Karoui, G. Rozgonyi, M. Hourai & K. Sueoka

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Multilayer TiC/TiN diffusion barrier films for copper

Applied Physics Letters, 80(1), 79–81.

By: S. Yoganand, M. Raghuveer, K. Jagannadham, L. Wu, A. Karoui & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Role of nitrogen related complexes in the formation of defects in silicon

Applied Physics Letters, 80(12), 2114–2116.

By: A. Karoui, F. Karoui, A. Kvit, G. Rozgonyi & D. Yang

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers

Gettering and Defect Engineering in Semiconductor Technology, 82-84(2002), 69–74.

By: A. Karoui, F. Karoui, D. Yang & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Electron beam induced current contrast of oxygen precipitation related defects in Czochralski silicon

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 78-79(2000), 237–252.

By: T. Ono, T. Sasaki, H. Kirk & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Gettering issues using MeV ion implantation

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 72(2-3), 87–92.

By: G. Rozgonyi, J. Glasko, K. Beaman & S. Koveshnikov

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Reconstructed (12,2,7) Si surface structure observed by scanning tunneling microscopy

Journal of Applied Physics, 87(2), 711–716.

By: T. Kawamura, T. Kanzawa, S. Kojima & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Analysis of capacitor breakdown mechanisms due to crystal- originated pits

IEEE Electron Device Letters, 20(10), 504–506.

By: T. Ono, G. Rozgonyi, H. Horie, M. Miyazaki & H. Tsuya

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bias dependent contrast mechanisms in EBIC images of MOS capacitors

Journal of the Electrochemical Society, 146(4), 1529–1535.

By: H. Kirk, Z. Radzimski, A. Romanowski & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

Applied Physics Letters, 73(9), 1206–1208.

By: O. Kononchuk, K. Korablev, N. Yarykin & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Drift of interstitial iron in a space charge region of p-type Si Schottky diode

Physica. B, Condensed Matter, 274(1999 Dec.), 395–397.

By: S. Koveshnikov, B. Choi, N. Yarykin & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon

Journal of the Electrochemical Society, 146(6), 2239–2244.

By: T. Ono, E. Asayama, H. Horie, M. Hourai, K. Sueoka, H. Tsuya, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

Applied Physics Letters, 74(9), 1263–1265.

By: C. Cho, N. Yarykin, R. Brown, O. Kononchuk, G. Rozgonyi & R. Zuhr

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247–252.

By: K. Beaman, J. Glasko, S. Koveshnikov & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

By: N. Yarykin, C. Cho, R. Zuhr & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

By: N. Yarykin, C. Cho, R. Zuhr & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

Journal of the Electrochemical Society, 146(5), 1925–1928.

By: K. Beaman, O. Kononchuk, S. Koveshnikov, C. Osburn & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon

Journal of the Electrochemical Society, 146(9), 3461–3465.

By: T. Ono, A. Romanowski, E. Asayama, H. Horie, K. Sueoka, H. Tsuya, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Oxygen diffusion in heavily antimony-, arsenic-, and boron- doped Czochralski silicon wafers

Applied Physics Letters, 74(24), 3648–3650.

By: T. Ono, G. Rozgonyi, E. Asayama, H. Horie, H. Tsuya & K. Sueoka

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers

Journal of the Electrochemical Society, 146(10), 3807–3811.

By: T. Ono, G. Rozgonyi, C. Au, T. Messina, R. Goodall & H. Huff

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

By: R. Brown, O. Kononchuk & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

Journal of Applied Physics, 85(9), 6408–6414.

By: A. Romanowski, G. Rozgonyi & M. Tamatsuka

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Size distribution of oxide precipitates in annealed Czochralski silicon

Electrochemical and Solid State Letters, 2(11), 589–591.

By: T. Sasaki, T. Ono & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

Applied Physics Letters, 75(2), 241–243.

By: N. Yarykin, C. Cho, G. Rozgonyi & R. Zuhr

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

By: O. Kononchuk, I. Bondarenko & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Frequency-resolved microwave reflection photoconductance

Journal of Applied Physics, 83(12), 7730–7735.

By: A. Romanowski, A. Buczkowski, A. Karoui & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Impurity gettering to secondary defects created by MeV ion implantation in silicon

Journal of Applied Physics, 84(5), 2459–2465.

By: R. Brown, O. Kononchuk, G. Rozgonyi, S. Koveshnikov, A. Knights, P. Simpson, F. Gonzalez

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon

Journal of Applied Physics, 84(6), 3078–3084.

By: S. Koveshnikov & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(3B), 1236–1239.

By: M. Tamatsuka, Z. Radzimski, G. Rozgonyi, S. Oka, M. Kato & Y. Kitagawara

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Gettering of iron in silicon on insulator wafers

Applied Physics Letters, 71(8), 1107–1109.

By: K. Beaman, A. Agarwal, O. Kononchuk, S. Koveshnikov, I. Bondarenko & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

Journal of the Electrochemical Society, 144(8), 2872–2881.

By: R. Brown, O. Kononchuk, I. Bondarenko, A. Romanowski, Z. Radzimski, G. Rozgonyi, F. Gonzalez

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of oxygen on secondary defect formation in MeV self-implanted silicon

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 55–58.

By: R. Brown, O. Kononchuk, Z. Radzimski, G. Rozgonyi & F. Gonzalez

Source: NC State University Libraries
Added: August 6, 2018