George A. Rozgonyi

Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing

Electronic Materials Letters, 11(4), 658–663.

The influence of hydrogenation on the electrical properties of impurity-contaminated silicon grain boundaries

Electronic Materials Letters, 11(6), 993–997.

Molybdenum nano-precipitates in silicon: A TEM and DLTS study

Physica Status Solidi. B, Basic Solid State Physics, 251(11), 2201–2204.

Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures

JOURNAL OF ELECTRONIC MATERIALS, 43(9), 3196–3203.

Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition

JOURNAL OF ELECTRONIC MATERIALS, 42(10), 2888–2896.

Effect of oxygen and associated residual stresses on the mechanical properties of high growth rate Czochralski silicon

Journal of Applied Physics, 113(13).

Fracture strength of photovoltaic silicon wafers evaluated using a controlled flaw method

Advanced Engineering Materials, 15(8), 756–760.

Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates

Physica Status Solidi. A, Applications and Materials Science, 210(9), 1828–1831.

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Applied Physics Letters, 101(22).

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon

Journal of Applied Physics, 111(3).

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012)

Journal of Applied Physics, Vol. 111.

Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon

Solar Energy Materials and Solar Cells, 96(1), 166–172.

Oxygen precipitation related stress-modified crack propagation in high growth rate Czochralski silicon wafers

Journal of the Electrochemical Society, 159(2), H125–129.

Poisson Ratio of Epitaxial Germanium Films Grown on Silicon

JOURNAL OF ELECTRONIC MATERIALS, 42(1), 40–46.

Understanding the effect of impurities and grain boundaries on mechanical behavior of Si via nanoindentation of (110)/(100) direct Si bonded wafers

Journal of Materials Research, 27(1), 349–355.

Effect of Au contamination on the electrical characteristics of a "model" small-angle grain boundary in n-type direct silicon bonded wafer

Journal of Applied Physics, 108(5).

Effect of nickel contamination on grain boundary states at a direct silicon bonded (110)/(100) interface

Scripta Materialia, 63(11), 1100–1103.

Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films

Microelectronic Engineering, 87(11), 2230–2233.

Modulation of 1.5 mu m dislocation-related luminescence emitted from a direct silicon bonded interface by external bias

Applied Physics Letters, 96(21).

Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary

Electronic Materials Letters, 6(1), 1–5.

Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers

Journal of Applied Physics, 105(1).

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Applied Physics Letters, 94(22).

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Applied Physics Letters, 92(26).

Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries

Applied Physics Letters, 92(8).

Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 11(1), 20–24.

Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures

Journal of Applied Physics, 103(7).

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary

Semiconductor Science and Technology, 23(12).

Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures

Journal of Applied Physics, 104(7).

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

Journal of Applied Physics, 104(11).

Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure

Journal of Applied Physics, 103(10).

Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer

Applied Physics Letters, 91(17).

Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces

Applied Physics Letters, 90(11).

EBIC characterization of strained Si/SiGe heterostructures

Semiconductors and Semimetals, 41(4), 402–406.

Passivation of hybrid-orientation direct silicon bonded interfaces

Wagener, M. C., Seacrist, M., & Rozgonyi, G. A. (2007, December 15). PHYSICA B-CONDENSED MATTER, Vol. 401, pp. 564–567.

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

APPLIED PHYSICS LETTERS, 90(19).

Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(11), G986–G991.

A new understanding of near-threshold damage for 200 keV irradiation in silicon

JOURNAL OF MATERIALS SCIENCE, 40(14), 3639–3650.

EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon

Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd.

Electrical, structural, and chemical analysis of defects in epitaxial SiGe-based heterostructures

Journal of the Electrochemical Society, 152(5), C310–315.

Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon

Journal of Applied Physics, 97(3).

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS, 84(11), 1889–1891.

Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.

Investigation of foreign particles in polycrystalline silicon using infrared microscopy

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 82(4), 577–585.

Oxygen precipitate denuded zone in polycrystalline sheet silicon

APPLIED PHYSICS LETTERS, 85(7), 1178–1180.

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263.

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling

JOURNAL OF APPLIED PHYSICS, 96(6), 3264–3271.

Secondary phase inclusions in polycrystalline sheet silicon

JOURNAL OF CRYSTAL GROWTH, 269(2-4), 599–605.

Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104.

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

JOURNAL OF APPLIED PHYSICS, 94(1), 140–144.

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

APPLIED PHYSICS LETTERS, 83(7), 1367–1369.

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313.

Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777.

Multilayer TiC/TiN diffusion barrier films for copper

APPLIED PHYSICS LETTERS, 80(1), 79–81.

Role of nitrogen related complexes in the formation of defects in silicon

APPLIED PHYSICS LETTERS, 80(12), 2114–2116.

Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers

Gettering and Defect Engineering in Semiconductor Technology, 82-84(2002), 69–74.

Electron beam induced current contrast of oxygen precipitation related defects in Czochralski silicon

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 78-79(2000), 237–252.

Gettering issues using MeV ion implantation

Rozgonyi, G. A., Glasko, J. M., Beaman, K. L., & Koveshnikov, S. V. (2000, March 15). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 72, pp. 87–92.

Reconstructed (12,2,7) Si surface structure observed by scanning tunneling microscopy

JOURNAL OF APPLIED PHYSICS, 87(2), 711–716.

Analysis of capacitor breakdown mechanisms due to crystal-originated pits

IEEE ELECTRON DEVICE LETTERS, 20(10), 504–506.

Bias dependent contrast mechanisms in EBIC images of MOS capacitors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1529–1535.

Drift of interstitial iron in a space charge region of p-type Si Schottky diode

Physica. B, Condensed Matter, 274(1999 Dec.), 395–397.

Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2239–2244.

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247–252.

In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928.

Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3461–3465.

Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS, 74(24), 3648–3650.

Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3807–3811.

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

JOURNAL OF APPLIED PHYSICS, 85(9), 6408–6414.

Size distribution of oxide precipitates in annealed Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2(11), 589–591.

The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

APPLIED PHYSICS LETTERS, 75(2), 241–243.

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

APPLIED PHYSICS LETTERS, 73(9), 1206–1208.

Frequency-resolved microwave reflection photoconductance

JOURNAL OF APPLIED PHYSICS, 83(12), 7730–7735.

Impurity gettering to secondary defects created by MeV ion implantation in silicon

JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465.

Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon

JOURNAL OF APPLIED PHYSICS, 84(6), 3078–3084.

Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects

Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. (1998, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1236–1239.

Gettering of iron in silicon-on-insulator wafers

APPLIED PHYSICS LETTERS, 71(8), 1107–1109.

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.

The effect of oxygen on secondary defect formation in MeV self-implanted silicon

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 55–58.