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Works (5)
2025 article
Efficient calculations of phonon-assisted Auger recombination in InGaN/GaN quantum wells based on the effective-bond orbital model
Hsiao, F.-C., Wierer, J. J., Chang, Y.-C., & Kish, F. (2025, August 14). Journal of Applied Physics, Vol. 138.
2025 article
Visible-spectrum (405–505 nm) low-temperature-deposited deuterated (D) SiNx-SiOy waveguides
Markham, K., Rabbani, M., Hsiao, F.-C., Wierer, J., & Kish, F. (2025, January 27). Applied Physics Letters, Vol. 126.
2024 article
High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 ∘ C
Rogers, D. J., Xue, H., Kish, F. A., Hsiao, F.-C., Pezeshki, B., Tselikov, A., & Wierer, J. J. (2024, July 29). IEEE Photonics Technology Letters.
2024 article
Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor
Kumar, R., Kaufman, R. B., Hsiao, F.-C., Leburton, J.-P., & Dallesasse, J. M. (2024, April 24). Journal of Applied Physics.
2023 article
Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures
Carlson, J. A., Hsiao, F.-C., Mironov, A., Carney, P. S., & Dallesasse, J. M. (2023, December 29). IEEE Journal of Quantum Electronics.