Meredith L. Reed

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

Applied Physics Letters, 86(10).

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface

Applied Physics Letters, 85(17), 3809–3811.

Electrical characterization of¹⁰B doped diamond irradiated with low thermal neutron fluence

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22(4), 1191–1194.

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.