Works (4)
2005 article
Effect of doping on the magnetic properties of GaMnN: Fermi level engineering
Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005, March 2). Applied Physics Letters.
2004 article
Dependence of ferromagnetic properties on carrier transfer at GaMnN∕GaN:Mg interface
Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004, October 25). Applied Physics Letters.
2004 article
Electrical characterization of B10 doped diamond irradiated with low thermal neutron fluence
Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. (2004, June 24). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 22, pp. 1191–1194.
Contributors: n, M. Reed n, K. Jagannadham n , K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler *
patent
Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.