2005 journal article
Effect of doping on the magnetic properties of GaMnN: Fermi level engineering
APPLIED PHYSICS LETTERS, 86(10).
2004 journal article
Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface
APPLIED PHYSICS LETTERS, 85(17), 3809–3811.
2004 article
Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194.
Contributors: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler *
patent
Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.
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