Daryl William Fothergill

Works (4)

Updated: July 5th, 2023 15:56

2006 article

Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates

Park, J.-S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006, May 1). Japanese Journal of Applied Physics.

By: J. Park n, D. Fothergill n, P. Wellenius n, S. Bishop n, J. Muth n  & R. Davis n

author keywords: light emitting diode; ultraviolet; parasitic emission; AlGaN; carrier blocking layer
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Source: Web Of Science
Added: August 6, 2018

2005 article

Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes

Park, J.-S., Fothergill, D. W., Zhang, X., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. (2005, October 1). Japanese Journal of Applied Physics.

By: J. Park n, D. Fothergill n, X. Zhang n, Z. Reitmeier n, J. Muth n  & R. Davis n

author keywords: light emitting diode; ultraviolet; AlGaN; carrier blocking layer; quantum well
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Gallium nitride surface quantum wells

Applied Physics Letters, 87(19).

By: J. Muth , X. Zhang, A. Cai, D. Fothergill, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2005 article

Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics

Park, J.-S., Reitmeier, Z. J., Fothergill, D., Zhang, X., Muth, J. F., & Davis, R. F. (2005, November 24). Materials Science and Engineering B.

By: J. Park n, Z. Reitmeier n, D. Fothergill n, X. Zhang n, J. Muth n  & R. Davis n

author keywords: light emitting diodes; ultraviolet; AlGaN; carrier-blocking layers
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

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