Works (9)
2003 article
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress
Lee, Y.-M., Wu, Y., & Lucovsky, G. (2003, October 21). Microelectronics Reliability.
2003 article
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
Lee, Y.-M., Wu, Y., Bae, C., Hong, J. G., & Lucovsky, G. (2003, January 1). Solid-State Electronics.
2000 article
1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process
Wu, Y., Lee, Y.-M., & Lucovsky, G. (2000, March 1). IEEE Electron Device Letters.
2000 article
The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
Wu, Y., Lucovsky, G., & Lee, Y.-M. (2000, July 1). IEEE Transactions on Electron Devices.
2000 article
Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides
Wu, Y., Xiang, Q., Yang, J. Y. M., Lucovsky, G., & Lin, M.-R. (2000, December 1). Microelectronics Reliability.
1999 article
Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics
Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999, April 5). Applied Physics Letters, Vol. 74, pp. 2005–2007.
1999 article
Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
Wu, Y., Xiang, Q., Bang, D., Lucovsky, G., & Lin, M.-R. (1999, June 1). IEEE Electron Device Letters.
1998 article
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
Lucovsky, G., Niimi, H., Wu, Y., Parker, C. R., & Hauser, J. R. (1998, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1998 article
Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process
Wu, Y., & Lucovsky, G. (1998, October 1). IEEE Electron Device Letters.