Works (9)

2004 journal article

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Microelectronics Reliability, 44(2), 207–212.

By: Y. Lee, Y. Wu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Solid-State Electronics, 47(1), 71–76.

By: Y. Lee, Y. Wu, C. Bae, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

IEEE Electron Device Letters, 21(3), 116–118.

By: Y. Wu, Y. Lee & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE Transactions on Electron Devices, 47(7), 1361–1369.

By: Y. Wu, G. Lucovsky & Y. Lee

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. Microelectronics Reliability, 40(12), 1987–1995.

By: Y. Wu, Q. Xiang, J. Yang, G. Lucovsky & M. Lin

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Applied Physics Letters, 74(14), 2005–2007.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

IEEE Electron Device Letters, 20(6), 262–264.

By: Y. Wu, Q. Xiang, D. Bang, G. Lucovsky & M. Lin

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.2), 1721–1729.

By: G. Lucovsky, H. Niimi, Y. Wu, C. Parker & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE Electron Device Letters, 19(10), 367–369.

By: Y. Wu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018