Yi Mu Lee

Works (9)

Updated: July 5th, 2023 16:02

2003 article

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Lee, Y.-M., Wu, Y., & Lucovsky, G. (2003, October 21). Microelectronics Reliability.

By: Y. Lee n, Y. Wu* & G. Lucovsky n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
TL;DR: The breakdown characteristics and time-to-breakdown (tBD) are recorded from p+-poly/n-Si capacitors under constant voltage stress (CVS) at different temperatures, and it is projected that the maximum safe operating voltage is ∼1.9 V for 2.07 nm O/N gate dielectric. (via Semantic Scholar)
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Source: Web Of Science
Added: August 6, 2018

2003 article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Lee, Y.-M., Wu, Y., Bae, C., Hong, J. G., & Lucovsky, G. (2003, January 1). Solid-State Electronics.

By: Y. Lee n, Y. Wu*, C. Bae n, J. Hong n & G. Lucovsky n

author keywords: dielectric degradation; soft breakdown; RPECVD oxide/nitride dielectric; stress-induced leakage current; constant voltage stress; hard breakdown
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
Source: Web Of Science
Added: August 6, 2018

2002 article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December 1). IEEE Transactions on Nuclear Science.

By: B. Choi *, D. Fleetwood *, R. Schrimpf *, L. Massengill *, K. Galloway *, M. Shaneyfelt*, T. Meisenfieimer, P. Dodd* ...

author keywords: heavy-ion irradiation; radiation effect; single-event effect; ultra-thin gate dielectric films
topics (OpenAlex): Semiconductor materials and devices; Advanced Memory and Neural Computing; Integrated Circuits and Semiconductor Failure Analysis
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 article

Reliability degradation of ultra-thin oxynitride and Al 2 O 3 gate dielectric films owing to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Massengill, L. W., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, February 14). Electronics Letters.

By: B. Choi *, D. Fleetwood *, L. Massengill *, R. Schrimpf *, K. Galloway *, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

topics (OpenAlex): Semiconductor materials and devices; Advanced Memory and Neural Computing; Ferroelectric and Negative Capacitance Devices
Source: NC State University Libraries
Added: August 6, 2018

2001 article

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December 1). IEEE Transactions on Nuclear Science.

By: L. Massengill *, B. Choi *, D. Fleetwood *, R. Schrimpf *, K. Galloway *, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

author keywords: dielectric breakdown; dielectric reliability; scaling; single-event radiation effects
topics (OpenAlex): Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis; Advanced Memory and Neural Computing
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

Wu, Y., Lee, Y.-M., & Lucovsky, G. (2000, March 1). IEEE Electron Device Letters.

By: Y. Wu*, Y. Lee n & G. Lucovsky n

author keywords: gate dielectric; MOSFET; nitride; oxide; tunneling current
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation

White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December 1). IEEE Transactions on Nuclear Science.

By: B. White*, L. Brillson *, S. Lee*, D. Fleetwood *, R. Schrimpf *, S. Pantelides *, Y. Lee n, G. Lucovsky n

topics (OpenAlex): Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis; Ion-surface interactions and analysis
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

Wu, Y., Lucovsky, G., & Lee, Y.-M. (2000, July 1). IEEE Transactions on Electron Devices.

By: Y. Wu n, G. Lucovsky n & Y. Lee n

author keywords: boron penetration; gate dielectrics; nitride; N/O; oxide
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and interfaces
Source: Web Of Science
Added: August 6, 2018

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