Works (9)

Updated: July 5th, 2023 16:02

2003 journal article

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

MICROELECTRONICS RELIABILITY, 44(2), 207–212.

By: Y. Lee n, Y. Wu* & G. Lucovsky n

TL;DR: The breakdown characteristics and time-to-breakdown (tBD) are recorded from p+-poly/n-Si capacitors under constant voltage stress (CVS) at different temperatures, and it is projected that the maximum safe operating voltage is ∼1.9 V for 2.07 nm O/N gate dielectric. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

SOLID-STATE ELECTRONICS, 47(1), 71–76.

By: Y. Lee n, Y. Wu*, C. Bae n, J. Hong n & G. Lucovsky n

author keywords: dielectric degradation; soft breakdown; RPECVD oxide/nitride dielectric; stress-induced leakage current; constant voltage stress; hard breakdown
Source: Web Of Science
Added: August 6, 2018

2002 article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050.

By: B. Choi*, D. Fleetwood*, R. Schrimpf*, L. Massengill*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer, P. Dodd* ...

author keywords: heavy-ion irradiation; radiation effect; single-event effect; ultra-thin gate dielectric films
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters, 38(4), 157–158.

By: B. Choi*, D. Fleetwood*, L. Massengill*, R. Schrimpf*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 48, pp. 1904–1912.

By: L. Massengill*, B. Choi*, D. Fleetwood*, R. Schrimpf*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

author keywords: dielectric breakdown; dielectric reliability; scaling; single-event radiation effects
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118.

By: Y. Wu*, Y. Lee n & G. Lucovsky n

author keywords: gate dielectric; MOSFET; nitride; oxide; tunneling current
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation

White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369.

By: Y. Wu n, G. Lucovsky n & Y. Lee n

author keywords: boron penetration; gate dielectrics; nitride; N/O; oxide
Source: Web Of Science
Added: August 6, 2018

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