Works (9)
Updated: July 5th, 2023 16:02
2003 journal article
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress
MICROELECTRONICS RELIABILITY, 44(2), 207–212.
TL;DR:
The breakdown characteristics and time-to-breakdown (tBD) are recorded from p+-poly/n-Si capacitors under constant voltage stress (CVS) at different temperatures, and it is projected that the maximum safe operating voltage is ∼1.9 V for 2.07 nm O/N gate dielectric.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
SOLID-STATE ELECTRONICS, 47(1), 71–76.
author keywords: dielectric degradation; soft breakdown; RPECVD oxide/nitride dielectric; stress-induced leakage current; constant voltage stress; hard breakdown
Source: Web Of Science
Added: August 6, 2018
2002 article
Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation
Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050.
author keywords: heavy-ion irradiation; radiation effect; single-event effect; ultra-thin gate dielectric films
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
Electronics Letters, 38(4), 157–158.
Source: NC State University Libraries
Added: August 6, 2018
2001 article
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics
Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 48, pp. 1904–1912.
author keywords: dielectric breakdown; dielectric reliability; scaling; single-event radiation effects
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process
IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118.
author keywords: gate dielectric; MOSFET; nitride; oxide; tunneling current
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.
Source: NC State University Libraries
Added: August 6, 2018
2000 article
Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation
White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369.
author keywords: boron penetration; gate dielectrics; nitride; N/O; oxide
Source: Web Of Science
Added: August 6, 2018
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