Works (9)

2004 journal article

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Microelectronics Reliability, 44(2), 207–212.

By: Y. Lee, Y. Wu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Solid-State Electronics, 47(1), 71–76.

By: Y. Lee, Y. Wu, C. Bae, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE Transactions on Nuclear Science, 49(6), 3045–3050.

By: B. Choi, D. Fleetwood, R. Schrimpf, L. Massengill, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters, 38(4), 157–158.

By: B. Choi, D. Fleetwood, L. Massengill, R. Schrimpf, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics

IEEE Transactions on Nuclear Science, 48(6), 1904–1912.

By: L. Massengill, B. Choi, D. Fleetwood, R. Schrimpf, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

IEEE Electron Device Letters, 21(3), 116–118.

By: Y. Wu, Y. Lee & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation

IEEE Transactions on Nuclear Science, 47(6), 2276–2280.

By: B. White, L. Brillson, S. Lee, D. Fleetwood, R. Schrimpf, S. Pantelides, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE Transactions on Electron Devices, 47(7), 1361–1369.

By: Y. Wu, G. Lucovsky & Y. Lee

Source: NC State University Libraries
Added: August 6, 2018