1998 journal article
Scaling trends for device performance and reliability in channel-engineered n-MOSFETs
IEEE Transactions on Electron Devices, 45(1), 254–260.
1997 journal article
Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies
IEEE Transactions on Electron Devices, 44(5), 815–821.
1994 journal article
An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications
IEEE Transactions on Electron Devices, 41(10), 1880–1882.
