R. B. Hulfachor

Works (3)

Updated: July 5th, 2023 16:04

1998 journal article

Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

IEEE Transactions on Electron Devices, 45(1), 254–260.

By: S. Williams n, R. Hulfachor n, K. Kim n , M. Littlejohn n & W. Holton n

Contributors: S. Williams n, R. Hulfachor n, K. Kim n , M. Littlejohn n & W. Holton n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1997 journal article

Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies

IEEE Transactions on Electron Devices, 44(5), 815–821.

By: R. Hulfachor n, K. Kim n , M. Littlejohn n & C. Osburn n

Contributors: R. Hulfachor n, K. Kim n , M. Littlejohn n & C. Osburn n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

1994 journal article

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

IEEE Transactions on Electron Devices, 41(10), 1880–1882.

By: H. Tian, R. Hulfachor n, J. Ellis-Monaghan*, K. Kim n, M. Littlejohn n, J. Hauser n, N. Masnari n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, Crossref
Added: August 6, 2018

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