1998 journal article

Scaling trends for device performance and reliability in channel-engineered n-MOSFET's

IEEE Transactions on Electron Devices, 45(1), 254–260.

By: S. Williams, R. Hulfachor, K. Kim, M. Littlejohn & W. Holton

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effects of silicon layer properties on device reliability for 0.1-mum soi n-mosfet design strategies

IEEE Transactions on Electron Devices, 44(5), 815–821.

By: R. Hulfachor, K. Kim, M. Littlejohn & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1994 journal article

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

IEEE Transactions on Electron Devices, 41(10), 1880–1882.

By: H. Tian, R. Hulfachor, J. Ellis-Monaghan, K. Kim, M. Littlejohn, J. Hauser, N. Masnari

Source: NC State University Libraries
Added: August 6, 2018