Works (13)
Updated: July 5th, 2023 15:47
2013 journal article
Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on Si and Ge substrates
Japanese Journal of Applied Physics, 52(10).
Source: NC State University Libraries
Added: August 6, 2018
2013 journal article
Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).
Source: Web Of Science
Added: August 6, 2018
2013 article
Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites
XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.
open access via iopscience.iop.org (publisher PDF)
Source: Web Of Science
Added: August 6, 2018
2013 conference paper
Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies
2013 14th international conference on ultimate integration on silicon (ulis), 174–177.
Source: NC State University Libraries
Added: August 6, 2018
2013 journal article
Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon
JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2013 journal article
Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys
Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).
Source: NC State University Libraries
Added: August 6, 2018
2012 journal article
Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon
Applied Physics Letters, 101(22).
Source: NC State University Libraries
Added: August 6, 2018
2012 journal article
Effect of nickel contamination on high carrier lifetime n-type crystalline silicon
Journal of Applied Physics, 111(3).
Source: NC State University Libraries
Added: August 6, 2018
2012 article
Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012)
Journal of Applied Physics, Vol. 111.
Source: NC State University Libraries
Added: August 6, 2018
2011 journal article
Characterization on bandedge electronic structure of MgO added Bi1.5Zn1.0Nb1.5O7 gate dielectrics for ZnO-thin film transistors
Electrochemical and Solid State Letters, 14(1), G4–7.
Source: NC State University Libraries
Added: August 6, 2018
2011 article
Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2
Lucovsky, G., & Kim, J. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968.
author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; In Line Auger Electron Spectroscopy; Remote Plasma-Assisted Oxide; Remote Plasma Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy
TL;DR:
The paper uses remote plasma assisted deposition, oxidation and nitridation processes for depositing thin films of metallic TiN on crystalline sapphire (0001) substrates that are being studied as window materials for high power radio frequency (RF) power tubes.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
2010 journal article
Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion
Nano Letters, 11(2), 751–756.
author keywords: Titanium oxide; oxide doping; transport; fluorine; surface conduction
MeSH headings : Computer Simulation; Crystallization / methods; Fluorine / chemistry; Gases / chemistry; Hot Temperature; Macromolecular Substances / chemistry; Materials Testing; Models, Chemical; Molecular Conformation; Nanostructures / chemistry; Nanostructures / ultrastructure; Nanotechnology / methods; Particle Size; Semiconductors; Surface Properties; Titanium / chemistry
TL;DR:
It is demonstrated that plasma-assisted fluorine insertion passivates defect states and that fluorine acts as an n-type donor in titanium oxide, and the Fermi level and transport properties of titanium oxide outside the limits of O vacancy doping are modified.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(Web of Science)
Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018
2010 journal article
Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature
Applied Physics Letters, 96(22).
Source: NC State University Libraries
Added: August 6, 2018
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