Jinwoo Kim

Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on Si and Ge substrates

Japanese Journal of Applied Physics, 52(10).

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.

Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies

2013 14th international conference on ultimate integration on silicon (ulis), 174–177.

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Applied Physics Letters, 101(22).

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon

Journal of Applied Physics, 111(3).

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012)

Journal of Applied Physics, Vol. 111.

Characterization on bandedge electronic structure of MgO added Bi1.5Zn1.0Nb1.5O7 gate dielectrics for ZnO-thin film transistors

Electrochemical and Solid State Letters, 14(1), G4–7.

Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion

Nano Letters, 11(2), 751–756.

Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2

Lucovsky, G., & Kim, J. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968.

Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

Applied Physics Letters, 96(22).