Jinwoo Kim

Works (13)

Updated: July 5th, 2023 15:47

2013 journal article

Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on Si and Ge substrates

Japanese Journal of Applied Physics, 52(10).

By: J. Kim, J. Kim, Y. Lee & H. Seo

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).

By: G. Lucovsky n, J. Kim n, K. Wu  n & D. Zeller n

Source: Web Of Science
Added: August 6, 2018

2013 article

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.

By: G. Lucovsky n, D. Zeller n, J. Kim n & K. Wu  n

Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies

2013 14th international conference on ultimate integration on silicon (ulis), 174–177.

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).

By: G. Lucovsky n, G. Parsons n , D. Zeller n & J. Kim n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Applied Physics Letters, 101(22).

By: Y. Yoon, Y. Yan, N. Ostrom, J. Kim & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon

Journal of Applied Physics, 111(3).

By: Y. Yoon, B. Paudyal, J. Kim, Y. Ok, P. Kulshreshtha, S. Johnston, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2012 article

Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012)

Journal of Applied Physics, Vol. 111.

By: Y. Yoon, B. Paudyal, J. Kim, Y. Ok, P. Kulshreshtha, S. Johnston, G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Characterization on bandedge electronic structure of MgO added Bi1.5Zn1.0Nb1.5O7 gate dielectrics for ZnO-thin film transistors

Electrochemical and Solid State Letters, 14(1), G4–7.

By: N. Cho, H. Seo, D. Kim, H. Kim, J. Kim & I. Kim

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion

Nano Letters, 11(2), 751–756.

By: H. Seo *, L. Baker, A. Hervier, J. Kim*, J. Whitten*  & G. Somorjai

author keywords: Titanium oxide; oxide doping; transport; fluorine; surface conduction
MeSH headings : Computer Simulation; Crystallization / methods; Fluorine / chemistry; Gases / chemistry; Hot Temperature; Macromolecular Substances / chemistry; Materials Testing; Models, Chemical; Molecular Conformation; Nanostructures / chemistry; Nanostructures / ultrastructure; Nanotechnology / methods; Particle Size; Semiconductors; Surface Properties; Titanium / chemistry
TL;DR: It is demonstrated that plasma-assisted fluorine insertion passivates defect states and that fluorine acts as an n-type donor in titanium oxide, and the Fermi level and transport properties of titanium oxide outside the limits of O vacancy doping are modified. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries, Crossref
Added: August 6, 2018

2011 article

Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2

Lucovsky, G., & Kim, J. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968.

By: G. Lucovsky n & J. Kim*

author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; In Line Auger Electron Spectroscopy; Remote Plasma-Assisted Oxide; Remote Plasma Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy
TL;DR: The paper uses remote plasma assisted deposition, oxidation and nitridation processes for depositing thin films of metallic TiN on crystalline sapphire (0001) substrates that are being studied as window materials for high power radio frequency (RF) power tubes. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

Applied Physics Letters, 96(22).

By: H. Seo, Y. Cho, J. Kim, S. Bobade, K. Park, J. Lee, D. Choi

Source: NC State University Libraries
Added: August 6, 2018

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