Rahul Suri

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Semiconductor Science and Technology, 28(7).

Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters, 33(9), 1240–1242.

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters, 96(4).

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Applied Physics Letters, 96(11).

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

2010 international electron devices meeting - technical digest.

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters, 93(19).

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

Applied Physics Letters, 92(24).