2013 journal article
Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation
Semiconductor Science and Technology, 28(7).
2012 journal article
Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs
IEEE Electron Device Letters, 33(9), 1240–1242.
2010 journal article
Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC
Applied Physics Letters, 96(4).
2010 journal article
Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
Applied Physics Letters, 96(11).
2010 conference paper
Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics
2010 international electron devices meeting - technical digest.
2010 conference paper
Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications
2010 international electron devices meeting - technical digest.
2008 journal article
Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
Applied Physics Letters, 93(19).
2008 journal article
Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric
Applied Physics Letters, 92(24).