Works (8)
Updated: July 5th, 2023 15:53
2013 journal article
Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2012 journal article
Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs
IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.
author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2010 journal article
Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC
Applied Physics Letters, 96(4).
Source: NC State University Libraries
Added: August 6, 2018
2010 journal article
Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
APPLIED PHYSICS LETTERS, 96(11).
author keywords: annealing; atomic layer deposition; gallium arsenide; high-k dielectric thin films; III-V semiconductors; interface phenomena; surface cleaning; X-ray photoelectron spectra
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2010 conference paper
Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics
2010 international electron devices meeting - technical digest.
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018
2010 conference paper
Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications
2010 international electron devices meeting - technical digest.
TL;DR:
Results indicate that high-K based IPD in conjunction with ultra-thin TaN metal FG can enable further scaling of NAND Flash memory beyond conventional oxide-nitride-oxide (ONO) based I PD technology.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018
2008 journal article
Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
APPLIED PHYSICS LETTERS, 93(19).
author keywords: annealing; atomic layer deposition; capacitance; dielectric thin films; gallium arsenide; hafnium compounds; III-V semiconductors; MOS capacitors; passivation; semiconductor-insulator boundaries; X-ray photoelectron spectra
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2008 journal article
Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric
APPLIED PHYSICS LETTERS, 92(24).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
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