Rahul Suri

Works (8)

Updated: July 5th, 2023 15:53

2013 article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Ramanan, N., Lee, B., Kirkpatrick, C., Suri, R., & Misra, V. (2013, June 21). Semiconductor Science and Technology, Vol. 28.

By: N. Ramanan n, B. Lee n, C. Kirkpatrick n, R. Suri n & V. Misra n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor materials and interfaces
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 article

Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X., & Misra, V. (2012, July 19). IEEE Electron Device Letters, Vol. 33, pp. 1240–1242.

By: C. Kirkpatrick n, B. Lee n, R. Suri n, X. Yang n & V. Misra n 

author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters, 96(4).

By: R. Suri, C. Kirkpatrick, D. Lichtenwalner & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 article

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Suri, R., Lichtenwalner, D. J., & Misra, V. (2010, March 15). Applied Physics Letters, Vol. 96.

By: R. Suri n, D. Lichtenwalner n & V. Misra n 

author keywords: annealing; atomic layer deposition; gallium arsenide; high-k dielectric thin films; III-V semiconductors; interface phenomena; surface cleaning; X-ray photoelectron spectra
topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advancements in Semiconductor Devices and Circuit Design
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 article

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO<inf>2</inf> tunnel dielectrics

Lee, B., Kirkpatrick, C., Yang, N. X., Jayanti, S., Suri, R., Roberts, J., & Misra, V. (2010, December 1). 2010 International Electron Devices Meeting - Technical Digest.

By: B. Lee n, C. Kirkpatrick n, N. Yang  n, S. Jayanti n, R. Suri n, J. Roberts n, V. Misra n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2010 article

Ultimate scalability of TaN metal floating gate with incorporation of high-K blocking dielectrics for Flash memory applications

Jayanti, S., Yang, N. X., Suri, R., & Misra, V. (2010, December 1). 2010 International Electron Devices Meeting - Technical Digest.

By: S. Jayanti n, N. Yang n, R. Suri n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Copper Interconnects and Reliability; Ferroelectric and Negative Capacitance Devices
TL;DR: Results indicate that high-K based IPD in conjunction with ultra-thin TaN metal FG can enable further scaling of NAND Flash memory beyond conventional oxide-nitride-oxide (ONO) based I PD technology. (via Semantic Scholar)
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7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2008 article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Suri, R., Lee, B., Lichtenwalner, D. J., Biswas, N., & Misra, V. (2008, November 10). Applied Physics Letters, Vol. 93.

By: R. Suri n, B. Lee n, D. Lichtenwalner  n, N. Biswas n & V. Misra n 

author keywords: annealing; atomic layer deposition; capacitance; dielectric thin films; gallium arsenide; hafnium compounds; III-V semiconductors; MOS capacitors; passivation; semiconductor-insulator boundaries; X-ray photoelectron spectra
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 article

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

Suri, R., Lichtenwalner, D. J., & Misra, V. (2008, June 16). Applied Physics Letters, Vol. 92.

By: R. Suri n, D. Lichtenwalner n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Advanced Memory and Neural Computing
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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