Works (8)

Updated: April 11th, 2023 10:13

2013 journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.

By: C. Kirkpatrick, B. Lee, R. Suri, X. Yang & V. Misra

author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters, 96(4).

By: R. Suri, C. Kirkpatrick, D. Lichtenwalner & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

APPLIED PHYSICS LETTERS, 96(11).

By: R. Suri, D. Lichtenwalner & V. Misra

author keywords: annealing; atomic layer deposition; gallium arsenide; high-k dielectric thin films; III-V semiconductors; interface phenomena; surface cleaning; X-ray photoelectron spectra
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

By: B. Lee, C. Kirkpatrick, X. Yang n, S. Jayanti n, R. Suri, J. Roberts*, V. Misra

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2010 conference paper

Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications

2010 international electron devices meeting - technical digest.

By: S. Jayanti n, X. Yang, R. Suri & V. Misra

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2008 journal article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

APPLIED PHYSICS LETTERS, 93(19).

By: R. Suri, B. Lee, D. Lichtenwalner, N. Biswas & V. Misra

author keywords: annealing; atomic layer deposition; capacitance; dielectric thin films; gallium arsenide; hafnium compounds; III-V semiconductors; MOS capacitors; passivation; semiconductor-insulator boundaries; X-ray photoelectron spectra
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS, 92(24).

By: R. Suri, D. Lichtenwalner & V. Misra

Sources: Web Of Science, ORCID
Added: August 6, 2018