Nivedita Biswas

Works (10)

Updated: July 5th, 2023 15:57

2012 article

Work function extraction of metal gates with alternate channel materials

Coan, M., Johnson, D., Woo, J. H., Biswas, N., Misra, V., Majhi, P., & Harris, H. R. (2012, February 8). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Vol. 30.

By: M. Coan*, D. Johnson*, J. Woo*, N. Biswas n, V. Misra n , P. Majhi, H. Harris*

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 article

Spatially Diffuse Pathsets for Robust Routing in Ad Hoc Networks

Biswas, T., & Dutta, R. (2011, December 1). 2011 Ieee Global Telecommunications Conference (Globecom 2011).

By: T. Biswas  n & R. Dutta n 

topics (OpenAlex): Mobile Ad Hoc Networks; Cooperative Communication and Network Coding; Energy Efficient Wireless Sensor Networks
TL;DR: This work considers a network of nodes addressed by their locations, and proposes a novel routing technique that is called Petal Routing, which maximizes reliability by using pathsets, made of diverse multiple paths, in place of a single path. (via Semantic Scholar)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2009 article

Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film

Chen, Z., Sarkar, S., Biswas, N., & Misra, V. (2009, January 1). Journal of The Electrochemical Society, Vol. 156, pp. H561–566.

By: Z. Chen n, S. Sarkar n, N. Biswas n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advanced Memory and Neural Computing
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Suri, R., Lee, B., Lichtenwalner, D. J., Biswas, N., & Misra, V. (2008, November 10). Applied Physics Letters, Vol. 93.

By: R. Suri n, B. Lee n, D. Lichtenwalner  n, N. Biswas n & V. Misra n 

author keywords: annealing; atomic layer deposition; capacitance; dielectric thin films; gallium arsenide; hafnium compounds; III-V semiconductors; MOS capacitors; passivation; semiconductor-insulator boundaries; X-ray photoelectron spectra
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 article

Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications

Lee, N. B., Biswas, N., Novak, S. R., & Misra, V. (2007, June 28). IEEE Electron Device Letters, Vol. 28, pp. 555–557.

By: N. Lee n, N. Biswas n, S. Novak n & V. Misra n 

author keywords: band edge work function; fully silicided (FUSI) gate; metal gate electrodes; n-MOSFET; nickel/gadolinium (Ni/Gd); Ni-FUSI; work function extraction
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and interfaces
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications

Chen, B., Biswas, N., & Misra, V. (2006, January 1). Journal of The Electrochemical Society, Vol. 153, pp. G417–419.

By: B. Chen n, N. Biswas n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

Chen, N. B., Jha, R., Lazar, H., Biswas, N., Lee, N. J., Lee, N. B., … Misra, V. (2006, April 1). IEEE Electron Device Letters, Vol. 27, pp. 228–230.

By: N. Chen n, R. Jha n, H. Lazar n, N. Biswas n, N. Lee n, N. Lee n, L. Wielunski*, E. Garfunkel *, V. Misra n 

author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles

Applied Physics Letters, 89(26).

By: R. Ravindran, K. Gangopadhyay, S. Gangopadhyay, N. Mehta & N. Biswas

Source: NC State University Libraries
Added: August 6, 2018

2005 article

Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application

Biswas, N., Gurganus, J., Misra, V., Yang, Y., & Stemmer, S. (2005, January 4). Applied Physics Letters, Vol. 86.

By: N. Biswas n, J. Gurganus n, V. Misra n , Y. Yang * & S. Stemmer *

topics (OpenAlex): Semiconductor materials and interfaces; Semiconductor materials and devices; Silicon and Solar Cell Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Work function tuning of nickel silicide by co-sputtering nickel and silicon

Biswas, N., Gurganus, J., & Misra, V. (2005, October 14). Applied Physics Letters, Vol. 87.

By: N. Biswas n, J. Gurganus n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Integrated Circuits and Semiconductor Failure Analysis
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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