2004 article

Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures

Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. (2004, January 1). MRS Internet Journal of Nitride Semiconductor Research.

By: J. Grenko n, C. Reynolds n, R. Schlesser n, K. Bachmann n, Z. Rietmeier n, R. Davis n, Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: NC State University Libraries
Added: August 6, 2018

1998 article

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Bachmann, K. J., Sukidi, N., Höpfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998, January 1). Journal of Crystal Growth, Vol. 183, pp. 323–337.

By: K. Bachmann n, N. Sukidi n, C. Höpfner n, C. Harris n, N. Dietz n, H. Tran n, S. Beeler n, K. Ito n, H. Banks n

author keywords: p-polarized reflectance; surface kinetics; chemical beam epitaxy; real-time process monitoring
topics (OpenAlex): Advanced Chemical Physics Studies; Spectroscopy and Quantum Chemical Studies; Photochemistry and Electron Transfer Studies
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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