Nikolaus Dietz

Optical properties of InN grown on templates with controlled surface polarities

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2351–2354.

Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy

ACTA MATERIALIA, 50(6), 1275–1287.

Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV

APPLIED PHYSICS LETTERS, 81(4), 628–630.

Stacking faults and twins in gallium phosphide layers grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 82(4), 685–698.

Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy

APPLIED SURFACE SCIENCE, 178(1-4), 63–74.

Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides

APPLIED OPTICS, 40(9), 1438–1441.

Orientation mediated self-assembled gallium phosphide islands grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.

Real-time thickness and compositional control of Ga1-xInxP growth using p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1190–1195.

Sellmeier parameters for ZnGaP2 and GaP

JOURNAL OF APPLIED PHYSICS, 87(3), 1564–1565.

Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000)

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 87, pp. 7597–7597.

Real-time optical control of Ga1-xInxP film growth by p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1300–1306.

Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements

JOURNAL OF APPLIED PHYSICS, 86(1), 674–682.

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).

Optical approaches for controlling epitaxial growth

Aspnes, D. E., & Dietz, N. (1998, June). APPLIED SURFACE SCIENCE, Vol. 130, pp. 367–376.

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337.

Real-time optical characterization of GaP heterostructures by p-polarized reflectance

Dietz, N., & Ito, K. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 614–619.

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

Real-time monitoring of surface processes by p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815.

Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy

Washington, DC: U.S. Patent and Trademark Office.

Multilevel approaches toward monitoring and control of semiconductor epitaxy

Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.