Works (20)
2010 article
Optical properties of InN grown on templates with controlled surface polarities
Kirste, R., Wagner, M. R., Schulze, J. H., Strittmatter, A., Collazo, R., Sitar, Z., … Hoffmann, A. (2010, July 9). Physica Status Solidi (a), Vol. 207, pp. 2351–2354.
2002 article
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy
Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002, April 1). Acta Materialia.
2002 article
Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV
Blickle, V., Flock, K., Dietz, N., & Aspnes, D. E. (2002, July 22). Applied Physics Letters, Vol. 81, pp. 628–630.
2002 article
Stacking faults and twins in gallium phosphide layers grown on silicon
Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002, March 1). Philosophical Magazine. A/Philosophical Magazine. A. Physics of Condensed Matter. Structure, Defects and Mechanical Properties.
2001 article
Surface reaction kinetics of Ga1−xInxP growth during pulsed chemical beam epitaxy
Dietz, N., Beeler, S. C., Schmidt, J. W., & Tran, H. T. (2001, July 1). Applied Surface Science, Vol. 178, pp. 63–74.
2001 article
Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides
Dimmock, J. O., Madarasz, F. L., Dietz, N., & Bachmann, K. J. (2001, March 20). Applied Optics.
2000 article
Erratum: “Sellmeier parameters for ZnGaP2 and GaP” [J. Appl. Phys. 87, 1564 (2000)]
Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). Journal of Applied Physics.
2000 article
Orientation mediated self-assembled gallium phosphide islands grown on silicon
Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000, March 1). Philosophical Magazine. A/Philosophical Magazine. A. Physics of Condensed Matter. Structure, Defects and Mechanical Properties.
2000 article
Real-time thickness and compositional control of Ga1−xInxP growth using p-polarized reflectance
Woods, V., Dietz, N., Ito, K., & Lauko, I. (2000, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2000 article
Sellmeier parameters for ZnGaP2 and GaP
Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, February 1). Journal of Applied Physics.
1999 article
Real-time optical control of Ga1−xInxP film growth byp-polarized reflectance
Dietz, N., Woods, V., Ito, K., & Lauko, I. (1999, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1999 article
Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements
Beeler, S., Tran, H. T., & Dietz, N. (1999, July 1). Journal of Applied Physics, Vol. 86, pp. 674–682.
1998 article
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates
Narayanan, V., Sukidi, N., Hu, C., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 1). Materials Science and Engineering B.
1998 article
Optical approaches for controlling epitaxial growth
Aspnes, D. E., & Dietz, N. (1998, June 1). Applied Surface Science, Vol. 132, pp. 367–376.
1998 article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
Bachmann, K. J., Sukidi, N., Höpfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998, January 1). Journal of Crystal Growth, Vol. 183, pp. 323–337.
1998 article
Real-time optical characterization of GaP heterostructures by p-polarized reflectance
Dietz, N., & Ito, K. (1998, February 1). Thin Solid Films.
1997 article
Molecular layer epitaxy by real-time optical process monitoring
Bachmann, K. J., Höpfner, C., Sukidi, N., Miller, A. E., Harris, C., Aspnes, D. E., … Rossow, U. (1997, March 1). Applied Surface Science, Vol. 112, pp. 38–47.
1997 article
Real-time monitoring of surface processes by p-polarized reflectance
Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1996 patent
Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
Washington, DC: U.S. Patent and Trademark Office.
1996 article
Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy
Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. (1996, January 1). MRS Proceedings, pp. 451–462.
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