2010 journal article
Optical properties of InN grown on templates with controlled surface polarities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2351–2354.
2002 journal article
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy
ACTA MATERIALIA, 50(6), 1275–1287.
2002 journal article
Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV
APPLIED PHYSICS LETTERS, 81(4), 628–630.
2002 journal article
Stacking faults and twins in gallium phosphide layers grown on silicon
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 82(4), 685–698.
2001 journal article
Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy
APPLIED SURFACE SCIENCE, 178(1-4), 63–74.
2001 journal article
Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides
APPLIED OPTICS, 40(9), 1438–1441.
2000 journal article
Orientation mediated self-assembled gallium phosphide islands grown on silicon
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.
2000 article
Real-time thickness and compositional control of Ga1-xInxP growth using p-polarized reflectance
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1190–1195.
2000 journal article
Sellmeier parameters for ZnGaP2 and GaP
JOURNAL OF APPLIED PHYSICS, 87(3), 1564–1565.
2000 article
Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000)
Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 87, pp. 7597–7597.
1999 article
Real-time optical control of Ga1-xInxP film growth by p-polarized reflectance
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1300–1306.
1999 journal article
Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements
JOURNAL OF APPLIED PHYSICS, 86(1), 674–682.
1998 personal communication
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates
Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).
1998 article
Optical approaches for controlling epitaxial growth
Aspnes, D. E., & Dietz, N. (1998, June). APPLIED SURFACE SCIENCE, Vol. 130, pp. 367–376.
1998 journal article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337.
1998 article
Real-time optical characterization of GaP heterostructures by p-polarized reflectance
Dietz, N., & Ito, K. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 614–619.
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
1997 article
Real-time monitoring of surface processes by p-polarized reflectance
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815.
1996 patent
Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
Washington, DC: U.S. Patent and Trademark Office.
1996 conference paper
Multilevel approaches toward monitoring and control of semiconductor epitaxy
Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.
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