Works (7)

2000 journal article

A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

IEEE Transactions on Electron Devices, 47(11), 2236–2237.

By: K. Ahmed, J. Wortman & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides

Electronics Letters, 36(20), 1699–1700.

By: K. Ahmed, E. Ibok & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

IEEE Transactions on Electron Devices, 47(7), 1349–1354.

By: K. Ahmed, E. Ibok, G. Bains, D. Chi, B. Ogle, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE Transactions on Electron Devices, 47(4), 891–895.

By: K. Ahmed, I. De, C. Osburn, J. Wortman & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE Electron Device Letters, 20(4), 179–181.

By: W. Henson, K. Ahmed, E. Vogel, J. Hauser, J. Wortman, R. Venables, M. Xu, D. Venables

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's

IEEE Transactions on Electron Devices, 46(8), 1650–1655.

By: K. Ahmed, E. Ibok, G. Yeap, Q. Xiang, B. Ogle, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Modeled tunnel currents for high dielectric constant dielectrics

IEEE Transactions on Electron Devices, 45(6), 1350–1355.

By: E. Vogel, K. Ahmed, B. Hornung, W. Henson, P. McLarty, G. Lucovsky, J. Hauser, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018