2000 journal article
A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides
IEEE Transactions on Electron Devices, 47(11), 2236–2237.
1999 journal article
Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's
IEEE Transactions on Electron Devices, 46(8), 1650–1655.