Works (7)
2000 journal article
A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides
IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(11), 2236–2237.
2000 journal article
Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides
ELECTRONICS LETTERS, 36(20), 1699–1700.
2000 journal article
Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime
IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1349–1354.
2000 journal article
Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895.
1999 journal article
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181.
1999 journal article
Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1650–1655.
1998 journal article
Modeled tunnel currents for high dielectric constant dielectrics
IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355.