Theodosia Gougousi

Charge generation during oxidation of thin Hf metal films on silicon

THIN SOLID FILMS, 513(1-2), 201–205.

Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

APPLIED PHYSICS LETTERS, 88(9).

Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

APPLIED PHYSICS LETTERS, 86(5).

Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species

JOURNAL OF APPLIED PHYSICS, 95(3), 1391–1396.

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

APPLIED PHYSICS LETTERS, 83(17), 3543–3545.

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.

The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions

APPLIED PHYSICS LETTERS, 80(23), 4419–4421.