Theodosia Gougousi

Charge generation during oxidation of thin Hf metal films on silicon

Gougousi, T., Terry, D. B., & Parsons, G. N. (2006, March 16). Thin Solid Films, Vol. 513, pp. 201–205.

Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

Barua, D., Gougousi, T., Young, E. D., & Parsons, G. N. (2006, February 27). Applied Physics Letters, Vol. 88.

Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

Park, K. J., Doub, J. M., Gougousi, T., & Parsons, G. N. (2005, January 30). Applied Physics Letters, Vol. 86.

Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species

Gougousi, T., & Parsons, G. N. (2004, January 25). Journal of Applied Physics, Vol. 95, pp. 1391–1396.

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

Gougousi, T., Niu, D., Ashcraft, R. W., & Parsons, G. N. (2003, October 24). Applied Physics Letters, Vol. 83, pp. 3543–3545.

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

Gougousi, T., Kelly, M. J., Terry, D. B., & Parsons, G. N. (2003, February 1). Journal of Applied Physics, Vol. 93, pp. 1691–1696.

The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions

Gougousi, T., Kelly, M. J., & Parsons, G. N. (2002, June 10). Applied Physics Letters, Vol. 80, pp. 4419–4421.