Works (7)

Updated: July 5th, 2023 16:00

2006 journal article

Charge generation during oxidation of thin Hf metal films on silicon

THIN SOLID FILMS, 513(1-2), 201–205.

By: T. Gougousi n, D. Terry n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, D. Terry n & G. Parsons n

author keywords: hafmium oxide; charge defects; dielectrics; interfaces; oxidation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

APPLIED PHYSICS LETTERS, 88(9).

By: D. Barua n, T. Gougousi n, E. Young n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: D. Barua n, T. Gougousi n, E. Young n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

APPLIED PHYSICS LETTERS, 86(5).

By: K. Park n, J. Doub n, T. Gougousi n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: K. Park n, J. Doub n, T. Gougousi n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 journal article

Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species

JOURNAL OF APPLIED PHYSICS, 95(3), 1391–1396.

By: T. Gougousi n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

APPLIED PHYSICS LETTERS, 83(17), 3543–3545.

By: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.

By: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions

APPLIED PHYSICS LETTERS, 80(23), 4419–4421.

By: T. Gougousi n, M. Kelly n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, M. Kelly n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018