Rashmi Jha

Works (5)

Updated: July 5th, 2023 15:58

2006 article

High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes

Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006, January 1). Journal of The Electrochemical Society, Vol. 153, pp. F210–214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra n , A. Kingon*

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advancements in Semiconductor Devices and Circuit Design
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

Chen, N. B., Jha, R., Lazar, H., Biswas, N., Lee, N. J., Lee, N. B., … Misra, V. (2006, April 1). IEEE Electron Device Letters, Vol. 27, pp. 228–230.

By: N. Chen n, R. Jha n, H. Lazar n, N. Biswas n, N. Lee n, N. Lee n, L. Wielunski*, E. Garfunkel *, V. Misra n 

author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN Alloys

Chen, B., Jha, R., & Misra, V. (2006, August 29). IEEE Electron Device Letters, Vol. 27, pp. 731–733.

By: B. Chen n, R. Jha n & V. Misra n 

author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

Jha, R., Lee, J. H., Majhi, P., & Misra, V. (2005, November 21). Applied Physics Letters, Vol. 87.

By: R. Jha n, J. Lee  n, P. Majhi & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advancements in Semiconductor Devices and Circuit Design
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 article

Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure

Kim, Y. H., Choi, R., Jha, R., Lee, J. H., Misra, V., & Lee, J. C. (2004, September 1). Microelectronics Reliability, Vol. 44, pp. 1513–1518.

By: Y. Kim, R. Choi, R. Jha, J. Lee, V. Misra  & J. Lee

topics (OpenAlex): Semiconductor materials and devices; Copper Interconnects and Reliability; Advancements in Semiconductor Devices and Circuit Design
TL;DR: The reliability of HfO 2 and how it depends on the barrier height and the nature of the bi-layer structure is presented and there is distinct bi-modal defect generation rate for high-k/SiO 2 stack. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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