Works (5)
Updated: July 5th, 2023 15:58
2006 journal article
High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2006 journal article
Influence of oxygen diffusion through capping layers of low work function metal gate electrodes
IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.
author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2006 journal article
Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys
IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733.
author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2005 journal article
Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications
APPLIED PHYSICS LETTERS, 87(22).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2004 article
Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure
MICROELECTRONICS RELIABILITY, Vol. 44, pp. 1513–1518.
TL;DR:
The reliability of HfO 2 and how it depends on the barrier height and the nature of the bi-layer structure is presented and there is distinct bi-modal defect generation rate for high-k/SiO 2 stack.
(via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
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