Works (5)

Updated: July 5th, 2023 15:58

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra n, A. Kingon*

co-author countries: Australia 🇦🇺 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.

By: B. Chen n, R. Jha n, H. Lazar n, N. Biswas n, J. Lee n, B. Lee n, L. Wielunski*, E. Garfunkel*, V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733.

By: B. Chen n, R. Jha n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

APPLIED PHYSICS LETTERS, 87(22).

By: R. Jha n, J. Lee n, P. Majhi & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure

MICROELECTRONICS RELIABILITY, Vol. 44, pp. 1513–1518.

By: Y. Kim, R. Choi, R. Jha, J. Lee, V. Misra & J. Lee

Sources: Web Of Science, ORCID
Added: August 6, 2018

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