Rashmi Jha

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

co-author countries: Australia 🇦🇺 United States of America 🇺🇸

10.1149/1.2218757

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.

By: B. Chenⁿ, R. Jhaⁿ, H. Lazarⁿ, N. Biswasⁿ, J. Leeⁿ, B. Leeⁿ, L. Wielunski^*, E. Garfunkel^*, V. Misraⁿ

co-author countries: United States of America 🇺🇸

author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion

10.1109/LED.2006.871184

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2006 journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733.

By: B. Chenⁿ, R. Jhaⁿ & V. Misraⁿ

co-author countries: United States of America 🇺🇸

author keywords: AlTa; AlTaN; dipole; effective work function; metal gate

10.1109/LED.2006.880643

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2005 journal article

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

APPLIED PHYSICS LETTERS, 87(22).

By: R. Jhaⁿ, J. Lee ⁿ, P. Majhi & V. Misraⁿ

co-author countries: United States of America 🇺🇸

10.1063/1.2136425

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2004 article

Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure

MICROELECTRONICS RELIABILITY, Vol. 44, pp. 1513–1518.

By: Y. Kim, R. Choi, R. Jha, J. Lee, V. Misra & J. Lee

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Sources: Web Of Science, ORCID

Added: August 6, 2018

Works (5)