Materials Science & Engineering

ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON

Journal of Non-Crystalline Solids, 114, 573–575.

REDUCTION OF DEFECTS BY HIGH-TEMPERATURE ANNEALING (150-DEGREES-C-240-DEGREES-C) IN HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED AT ROOM-TEMPERATURE

Journal of Non-Crystalline Solids, 114, 178–180.

RAMAN-SCATTERING FROM MICROCRYSTALLINE SI FILMS - CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL-ABSORPTION PROPERTIES

Journal of Non-Crystalline Solids, 114, 813–815.

PRECURSORS FOR THE DEPOSITION OF AMORPHOUS-SILICON HYDROGEN ALLOYS BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 7(3), 1124–1129.

OPTICAL-EMISSION AND MASS SPECTROSCOPIC STUDIES OF THE GAS-PHASE DURING THE DEPOSITION OF SIO2 AND A-SI-H BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 7(3), 1115–1123.

LOW-TEMPERATURE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H) - CONTROL OF POLYHYDRIDE INCORPORATION AND ITS EFFECTS ON THIN-FILM PROPERTIES

Solar Cells, 27(1-4), 121–136.

INCORPORATION OF POLYHYDRIDE BONDING GROUPS INTO THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

Journal of Non-Crystalline Solids, 114, 154–156.

EFFECTS OF GAS ADDITIVES ON THE PROPERTIES OF A-SI-H FILMS

Journal of Non-Crystalline Solids, 114, 193–195.

DEPENDENCE OF A-SI-H/SI3N4 INTERFACE PROPERTIES ON THE DEPOSITION SEQUENCE IN AMORPHOUS-SILICON THIN-FILM TRANSISTOR PRODUCED BY REMOTE PECVD PROCESS

Journal of Non-Crystalline Solids, 115(1-3), 69–71.

DEFECTS IN A-SI-H FILMS PRODUCED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

Journal of Non-Crystalline Solids, 107(2-3), 295–300.

The development of high temperatures in titanium alloys during fast fracture

Strength of Metals and Alloys (ICSMA 8), 3, 1095–1100.

Microstructure and in-situ processing of epitaxial high-Tc films

High temperature superconducting compounds : processing & related properties : proceedings of the 1989 Symposium on High Temperature Superconducting Oxides--Processing & Related Properties, which was sponsored by the Superconducting Materials Committee and held in Las Vegas, NV, February 27 and 28, 1989, at the 118th Annual Meeting of the Minerals, Metals & Materials Society, 337–358. Warrendale, Pa.: The Metallurgical Society Inc.

Chemical model for intrinsic detonation velocities

International Journal of Quantum Chemistry, 36(S23), 333–337.

Modelling of microstructural features in Y-Ba-Cu-O superconductors

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 59(5), 917–937.

Modeling the temperature rise at the tip of a fast crack

Zeitschrift Fuer Metallkunde/Materials Research and Advanced Techniques, 80(10), 698–709. http://www.scopus.com/inward/record.url?eid=2-s2.0-0024749727&partnerID=MN8TOARS

Misfit dislocations in superconducting thin films on SrTiO3{010}

Materials Science and Engineering B, 2(4), 333–337.

Low energy cleavage fracture associated with the hydrogen embrittlement of refractory metal alloys

Materials Science and Engineering A, 113(C), 339–366.

Dislocation cell size in a spatially varying stress field of a crack tip region

Materials Science and Engineering A, 113(C), 373–383.

A two-parameter representation of dynamic dislocation distributions

Materials Science and Engineering A, 113(C), 197–206.

Mechanisms of Improvement of Fracture Strength in Laser‐Surface‐Modified Ceramics

Journal of the American Ceramic Society, 72(7), 1185–1191.