Materials Science and Engineering

Works Published in 1987

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Displaying works 1 - 20 of 22 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1987 journal article

PHOTOELECTRONIC PROPERTIES OF A-SI=H AND A-GE=H THIN-FILMS IN SURFACE CELL STRUCTURES

Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 5(4), 1655–1660.

By: G. Parsons n , C. Kusano* & G. Lucovsky n

co-author countries: Japan πŸ‡―πŸ‡΅ United States of America πŸ‡ΊπŸ‡Έ

Contributors: G. Parsons n , C. Kusano* & G. Lucovsky n

Source: ORCID
Added: June 22, 2023

1987 journal article

BONDING DEFECTS IN AMORPHOUS-SILICON ALLOYS

Solar Cells, 21, 387–397.

By: J. Cook n, G. Parsons n , C. Kusano n & G. Lucovsky n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: J. Cook n, G. Parsons n , C. Kusano n & G. Lucovsky n

Source: ORCID
Added: June 22, 2023

1987 conference paper

Stress distribution and critical thicknesses of thin epitaxial films.

MRS Online Proceedings Library, 91, 311–321.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Event: Heteroepitaxy on Silicon II: Symposium at Anaheim, California on April 21-23, 1987

Sources: NC State University Libraries, ORCID
Added: November 4, 2021

1987 conference paper

Effect of free surfaces and interfaces on dopant distribution profiles

MRS Online Proceedings Library, 91, 81–90.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Event: Heteroepitaxy on Silicon II: Symposium at Anaheim, California on April 21-23, 1987

Sources: NC State University Libraries, ORCID
Added: October 24, 2021

1987 conference paper

Stress distribution and critical thickness of thin epitaxial films

MRS Online Proceedings Library, 102, 31–39.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Event: Epitaxy of Semiconductor Layered Structures: Symposium at Boston, Massachusetts on November 30 - December 4, 1987

Sources: NC State University Libraries, ORCID
Added: October 24, 2021

1987 journal article

The elastic field associated with a square dislocation loop in a two-phase medium

Journal of Applied Physics, 62(5), 1698–1703.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: ORCID
Added: January 8, 2020

1987 journal article

Spatially varying crack tip stress fields and low energy dislocation substructures

International Journal of Fracture, 34(4), 297–307.

By: K. Jagannadham  n & H. Wilsdorf*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: K. Jagannadham  n & H. Wilsdorf*

Source: ORCID
Added: January 8, 2020

1987 journal article

The development of dislocation substructure in hydrogen embrittled niobium-8 to 10 at % vanadium alloy - Part 1

Journal of Materials Science, 22(3), 803–817.

By: K. Jagannadham  n & F. Laabs*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: K. Jagannadham  n & F. Laabs*

Source: ORCID
Added: January 8, 2020

1987 conference paper

SURFACE MODIFICATION AND PROCESSING OF MATERIALS.

33–61. http://www.scopus.com/inward/record.url?eid=2-s2.0-0023594488&partnerID=MN8TOARS

By: J. Narayan, R. Singh & K. Jagannadham

Contributors: J. Narayan, R. Singh & K. Jagannadham

Source: ORCID
Added: January 8, 2020

1987 journal article

Evidence for dislocation pile-ups at grain boundaries from slip band step height observations

Scripta Metallurgica, 21(11), 1459–1462.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: ORCID
Added: January 8, 2020

1987 journal article

Effect of free surface and interface on thermal annealing of dislocation loops in silicon

Journal of Applied Physics, 62(5), 1694–1697.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: ORCID
Added: January 8, 2020

1987 journal article

Modification of dopant profiles due to surface and interface interactions: Applications to semiconductor materials

Journal of Applied Physics, 61(3), 985–992.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: ORCID
Added: January 8, 2020

1987 journal article

Dislocation substructure in in situ deformed foils of niobium-8 to 10 at % vanadium alloy - Part 2

Journal of Materials Science, 22(3), 818–825.

By: K. Jagannadham  n & F. Laabs*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: K. Jagannadham  n & F. Laabs*

Source: ORCID
Added: January 8, 2020

1987 journal article

Deformation and fracture behavior of niobium-10 at % vanadium alloy with hydrogen

Journal of Materials Science, 22(12), 4251–4266.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: K. Jagannadham  n

Source: ORCID
Added: January 8, 2020

1987 journal article

Formation of thin superconducting films by the laser processing method

Applied Physics Letters, 51(22), 1845–1847.

By: J. Narayan , R. Singh, O. Holland, O. Auciello & N. Biunno

Source: NC State University Libraries
Added: January 24, 2019

1987 journal article

Photoelectronic properties of a-Si:H and a-Ge:H thin films in surface cell structures

Journal of Vacuum Science & Technology, A(5), 1655–1660.

By: G. Parsons , C. Kusano & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1987 journal article

OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION (RPECVD)

JOURNAL OF NON-CRYSTALLINE SOLIDS, 97-8, 1375–1378.

By: G. Parsons n , D. Tsu n & G. Lucovsky n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: G. Parsons n , D. Tsu n & G. Lucovsky n

Sources: Web Of Science, ORCID
Added: August 6, 2018

1987 personal communication

C-13 MAGIC-ANGLE SPINNING NMR INVESTIGATION OF SITE EFFECTS IN CRYSTALLINE OS3(CO)12

HASSELBRING, L., LAMB, H., DYBOWSKI, C., GATES, B., & RHEINGOLD, A. (1987, March 9).

By: L. Hasselbring*, H. Lamb*, C. Dybowski*, B. Gates * & A. Rheingold*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

1987 patent

Phase difference measurement system

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehkre

Source: NC State University Libraries
Added: August 6, 2018

1987 journal article

Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena, 5(2), 530–537.

By: G. Lucovsky, M. Manitini, J. Srivastava & E. Irene

Source: NC State University Libraries
Added: August 6, 2018

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