Displaying works 1 - 20 of 22 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1987 journal article
PHOTOELECTRONIC PROPERTIES OF A-SI=H AND A-GE=H THIN-FILMS IN SURFACE CELL STRUCTURES
Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 5(4), 1655–1660.
Contributors: G. Parsons n , C. Kusano* & G. Lucovsky n
1987 journal article
BONDING DEFECTS IN AMORPHOUS-SILICON ALLOYS
Solar Cells, 21, 387–397.
Contributors: J. Cook n, G. Parsons n , C. Kusano n & G. Lucovsky n
1987 conference paper
Stress distribution and critical thicknesses of thin epitaxial films.
MRS Online Proceedings Library, 91, 311–321.
Event: Heteroepitaxy on Silicon II: Symposium at Anaheim, California on April 21-23, 1987
1987 conference paper
Effect of free surfaces and interfaces on dopant distribution profiles
MRS Online Proceedings Library, 91, 81–90.
Event: Heteroepitaxy on Silicon II: Symposium at Anaheim, California on April 21-23, 1987
1987 conference paper
Stress distribution and critical thickness of thin epitaxial films
MRS Online Proceedings Library, 102, 31–39.
Event: Epitaxy of Semiconductor Layered Structures: Symposium at Boston, Massachusetts on November 30 - December 4, 1987
1987 journal article
The elastic field associated with a square dislocation loop in a two-phase medium
Journal of Applied Physics, 62(5), 1698–1703.
Contributors: K. Jagannadham n & J. Narayan n
1987 journal article
Spatially varying crack tip stress fields and low energy dislocation substructures
International Journal of Fracture, 34(4), 297–307.
Contributors: K. Jagannadham n & H. Wilsdorf*
1987 journal article
The development of dislocation substructure in hydrogen embrittled niobium-8 to 10 at % vanadium alloy - Part 1
Journal of Materials Science, 22(3), 803–817.
Contributors: K. Jagannadham n & F. Laabs*
1987 conference paper
SURFACE MODIFICATION AND PROCESSING OF MATERIALS.
33–61. http://www.scopus.com/inward/record.url?eid=2-s2.0-0023594488&partnerID=MN8TOARS
Contributors: J. Narayan, R. Singh & K. Jagannadham
1987 journal article
Evidence for dislocation pile-ups at grain boundaries from slip band step height observations
Scripta Metallurgica, 21(11), 1459–1462.
Contributors: K. Jagannadham n & R. Armstrong *
1987 journal article
Effect of free surface and interface on thermal annealing of dislocation loops in silicon
Journal of Applied Physics, 62(5), 1694–1697.
Contributors: J. Narayan n & K. Jagannadham n
1987 journal article
Modification of dopant profiles due to surface and interface interactions: Applications to semiconductor materials
Journal of Applied Physics, 61(3), 985–992.
Contributors: K. Jagannadham n & J. Narayan n
1987 journal article
Dislocation substructure in in situ deformed foils of niobium-8 to 10 at % vanadium alloy - Part 2
Journal of Materials Science, 22(3), 818–825.
Contributors: K. Jagannadham n & F. Laabs*
1987 journal article
Deformation and fracture behavior of niobium-10 at % vanadium alloy with hydrogen
Journal of Materials Science, 22(12), 4251–4266.
Contributors: K. Jagannadham n
1987 journal article
Formation of thin superconducting films by the laser processing method
Applied Physics Letters, 51(22), 1845–1847.
1987 journal article
Photoelectronic properties of a-Si:H and a-Ge:H thin films in surface cell structures
Journal of Vacuum Science & Technology, A(5), 1655–1660.
1987 journal article
OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION (RPECVD)
JOURNAL OF NON-CRYSTALLINE SOLIDS, 97-8, 1375–1378.
Contributors: G. Parsons n , D. Tsu n & G. Lucovsky n
1987 personal communication
C-13 MAGIC-ANGLE SPINNING NMR INVESTIGATION OF SITE EFFECTS IN CRYSTALLINE OS3(CO)12
HASSELBRING, L., LAMB, H., DYBOWSKI, C., GATES, B., & RHEINGOLD, A. (1987, March 9).
1987 patent
Phase difference measurement system
Washington, DC: U.S. Patent and Trademark Office.
1987 journal article
Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy
Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena, 5(2), 530–537.
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