Materials Science & Engineering

Critical current density and atomic structure of grain boundaries in high-Tc superconductors

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, 61(2), 129–146.

Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique

Journal of Applied Physics, 68(1), 233–247.

Subsurface heating effects during pulsed laser evaporation of materials

Applied Physics Letters, 57(19), 2022–2024.

A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS

JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857.

Ultrafast recombination and trapping in amorphous silicon

Physical Review, B(41), 2879–2884.

Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon, nitrogen alloys

Physical Review, B(41), 1664–1667.

Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon

Applied Physics Letters, 56, 1895–1897.

ANNEALING OF INTRINSIC AND PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

THIN SOLID FILMS, 193(1-2), 577–587.

A STRUCTURALLY SIMPLE SUPPORTED METAL CATALYST PREPARED FROM DECAOSMIUM CARBONYL CLUSTERS ON MAGNESIUM-OXIDE

JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, (19), 1296–1298.

Computer-assisted microscopy the measurement and analysis of images

New York: Plenum Press.

Bipolar junction transistor on silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

Sputter deposition for multi-component thin films

Washington, DC: U.S. Patent and Trademark Office.

Optical control of deposition of crystal monolayers

Washington, DC: U.S. Patent and Trademark Office.

P-N junction diodes in silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

Growth of beta-sic thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS - PHYSICS AND THEORETICAL-MODEL

PHYSICAL REVIEW B, 41(13), 8843–8859.

ANALYSIS OF THE COMPOSITE STRUCTURES IN DIAMOND THIN-FILMS BY RAMAN-SPECTROSCOPY

PHYSICAL REVIEW B, 41(6), 3738–3745.

AMORPHIZATION AND DISORDERING OF THE NI3AL ORDERED INTERMETALLIC BY MECHANICAL MILLING

JOURNAL OF MATERIALS RESEARCH, 5(3), 498–510.

Principal direction paths in tension-torsion test at finite strain

Journal of Engineering Mechanics, 116, 1002–1019.