Materials Science and Engineering

Works Published in 1990

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Displaying works 1 - 20 of 23 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1990 chapter

RAMAN-SCATTERING FROM MICROCRYSTALLINE FILMS - CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL-ABSORPTION PROPERTIES

In Materials Issues in Microcrystalline Semiconductors (Vol. 164, pp. 265–270). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1990BR31R00039&KeyUID=WOS:A1990BR31R00039

By: R. Nemanich, E. Buehler, Y. Legrice, R. Shroder, G. Parsons, C. Wang, G. Lucovsky, J. Boyce ...

Contributors: R. Nemanich, E. Buehler, Y. Legrice, R. Shroder, G. Parsons, C. Wang, G. Lucovsky, J. Boyce ...

Source: ORCID
Added: June 22, 2023

1990 journal article

POSTDEPOSITION RELAXATION OF ELECTRONIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

Applied Physics Letters, 56(19), 1895–1897.

By: G. Parsons n, C. Wang n, M. Williams n & G. Lucovsky n

Contributors: G. Parsons n, C. Wang n, M. Williams n & G. Lucovsky n

Source: ORCID
Added: June 22, 2023

1990 journal article

FORMATION OF SILICON-BASED HETEROSTRUCTURES IN MULTICHAMBER INTEGRATED-PROCESSING THIN-FILM DEPOSITION SYSTEMS

Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 8(3), 1947–1954.

By: G. Lucovsky n, S. Kim n, D. Tsu n, G. Parsons n & J. Fitch n

Contributors: G. Lucovsky n, S. Kim n, D. Tsu n, G. Parsons n & J. Fitch n

Source: ORCID
Added: June 22, 2023

1990 journal article

Critical current density and atomic structure of grain boundaries in high-T<inf>c</inf> superconductors

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, 61(2), 129–146.

Source: ORCID
Added: January 8, 2020

1990 journal article

Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique

Journal of Applied Physics, 68(1), 233–247.

By: R. Singh, O. Holland & J. Narayan

Source: NC State University Libraries
Added: January 24, 2019

1990 journal article

Subsurface heating effects during pulsed laser evaporation of materials

Applied Physics Letters, 57(19), 2022–2024.

By: R. Singh, J. Narayan & D. Bhattacharya

Source: NC State University Libraries
Added: January 24, 2019

1990 journal article

A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS

JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857.

By: S. Hussien n, A. Fahmy n, N. Elmasry n & S. Bedair n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1990 journal article

ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON

Physical Review B, 41(5), 2879–2884.

By: A. Esser*, K. Seibert*, H. Kurz*, G. Parsons*, C. Wang*, B. Davidson*, G. Lucovsky*, R. Nemanich*

Contributors: A. Esser*, K. Seibert*, H. Kurz*, G. Parsons*, C. Wang*, B. Davidson*, G. Lucovsky*, R. Nemanich*

TL;DR: It is suggested that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails. (via Semantic Scholar)
Sources: ORCID, NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1990 journal article

SILICON-HYDROGEN BOND-STRETCHING VIBRATIONS IN HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS

Physical Review B, 41(3), 1664–1667.

By: G. Parsons n & G. Lucovsky n

Contributors: G. Parsons n & G. Lucovsky n

TL;DR: On demontre qu'un modele quantitatif, developpe pour decrire des deplacements inductifs des frequences de mode d'etirement de Si-H dans le systeme amorphe Si-O hydrogene peut etre aussi applique aux alliages silicium-azote hydrogenes. (via Semantic Scholar)
Sources: ORCID, NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1990 journal article

Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon

Applied Physics Letters, 56, 1895–1897.

By: G. Parsons, C. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1990 journal article

ANNEALING OF INTRINSIC AND PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

THIN SOLID FILMS, 193(1-2), 577–587.

Contributors: G. Parsons n, C. Wang n & G. Lucovsky n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

1990 journal article

A STRUCTURALLY SIMPLE SUPPORTED METAL CATALYST PREPARED FROM DECAOSMIUM CARBONYL CLUSTERS ON MAGNESIUM-OXIDE

JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, (19), 1296–1298.

By: H. Lamb*, M. Wolfer & B. Gates

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1990 book

Computer-assisted microscopy the measurement and analysis of images

New York: Plenum Press.

By: J. Russ.

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Bipolar junction transistor on silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Sputter deposition for multi-component thin films

Washington, DC: U.S. Patent and Trademark Office.

By: A. Krauss & O. Auciello

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Optical control of deposition of crystal monolayers

Washington, DC: U.S. Patent and Trademark Office.

By: D. Aspnes, R. Bhat, E. Colas, L. Florez, J. Harbison & A. Studna

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

P-N junction diodes in silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

By: J. Edmond & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: H. Kong, J. Glass & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1990 patent

Growth of beta-sic thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, H. Kong, J. Glass & C. Carter

Source: NC State University Libraries
Added: August 6, 2018

1990 journal article

PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS - PHYSICS AND THEORETICAL-MODEL

PHYSICAL REVIEW B, 41(13), 8843–8859.

TL;DR: The forward-directed nature of the laser evaporation process has been found to result from anisotropic expansion velocities of the atomic species which are controlled by the dimensions of the expanding plasma. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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