Materials Science & Engineering

Nature of textured growth of laser-deposited YBaCuO thin films on (100) MgO

Materials Science and Engineering B, 7(4), 287–296.

Nucleation of a 60° glide dislocation in two-dimensional or three-dimensional growth of epilayers

Journal of Electronic Materials, 20(7), 767–774.

Grain boundary modeling in high critical temperature superconductors

Materials Science and Engineering B, 8(1), 5–21.

Misfit accommodation at epitaxial interfaces

Journal of Electronic Materials, 20(7), 861–867.

Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructures

Materials Science and Engineering B, 8(2), 107–124.

A comparative study of grain boundary structure and critical current density in 123-YBaCuO, 2212-BiSrCaCuO and 2223-TlBaCaCuO high temperature superconductors

Materials Science and Engineering B, 8(3), 201–218.

PRECISE DTA TESTING OF HIGHLY REACTIVE ALLOYS

ADVANCED MATERIALS & PROCESSES, 140(4), 51–53.

PRECISE DETERMINATION OF ISOMORPHOUS AND EUTECTOID TRANSFORMATION TEMPERATURES IN BINARY AND TERNARY ZR ALLOYS

JOURNAL OF MATERIALS SCIENCE, 26(22), 6218–6222.

DETERMINATION OF EQUILIBRIUM SOLID-PHASE TRANSITION-TEMPERATURE USING DTA

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 22(9), 1993–1998.

Laser method for synthesis and processing of continuous diamond films on nondiamond substrates

Science, 252(5004), 416–418.

SELECTIVE DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING PULSED SILANE FLOW

APPLIED PHYSICS LETTERS, 59(20), 2546–2548.

LOW HYDROGEN CONTENT STOICHIOMETRIC SILICON-NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

JOURNAL OF APPLIED PHYSICS, 70(3), 1553–1560.

Surface modification of boron carbide to form pockets of solid lubricant

Washington, DC: U.S. Patent and Trademark Office.

Dry etching of silicon carbide

Washington, DC: U.S. Patent and Trademark Office.

Sintered ceramic product

Washington, DC: U.S. Patent and Trademark Office.

Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon

Washington, DC: U.S. Patent and Trademark Office.

THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE

PROCEEDINGS OF THE IEEE, 79(5), 677–701.

III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS

PROCEEDINGS OF THE IEEE, 79(5), 702–712.

INVESTIGATION OF A ONE-PARAMETER FAMILY OF HARDENING RULES IN SINGLE SLIP IN FCC CRYSTALS

INTERNATIONAL JOURNAL OF PLASTICITY, 7(6), 477–503.