College of Engineering
Displaying all 19 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1991 journal article
Nature of textured growth of laser-deposited YBaCuO thin films on (100) MgO
Materials Science and Engineering B, 7(4), 287–296.
1991 journal article
Nucleation of a 60° glide dislocation in two-dimensional or three-dimensional growth of epilayers
Journal of Electronic Materials, 20(7), 767–774.
1991 journal article
Grain boundary modeling in high critical temperature superconductors
Materials Science and Engineering B, 8(1), 5–21.
1991 journal article
Misfit accommodation at epitaxial interfaces
Journal of Electronic Materials, 20(7), 861–867.
1991 journal article
Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructures
Materials Science and Engineering B, 8(2), 107–124.
1991 journal article
A comparative study of grain boundary structure and critical current density in 123-YBaCuO, 2212-BiSrCaCuO and 2223-TlBaCaCuO high temperature superconductors
Materials Science and Engineering B, 8(3), 201–218.
1991 journal article
PRECISE DTA TESTING OF HIGHLY REACTIVE ALLOYS
ADVANCED MATERIALS & PROCESSES, 140(4), 51–53.
1991 journal article
PRECISE DETERMINATION OF ISOMORPHOUS AND EUTECTOID TRANSFORMATION TEMPERATURES IN BINARY AND TERNARY ZR ALLOYS
JOURNAL OF MATERIALS SCIENCE, 26(22), 6218–6222.
1991 journal article
DETERMINATION OF EQUILIBRIUM SOLID-PHASE TRANSITION-TEMPERATURE USING DTA
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 22(9), 1993–1998.
1991 journal article
Laser method for synthesis and processing of continuous diamond films on nondiamond substrates
Science, 252(5004), 416–418.
1991 journal article
SELECTIVE DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING PULSED SILANE FLOW
APPLIED PHYSICS LETTERS, 59(20), 2546–2548.
1991 journal article
LOW HYDROGEN CONTENT STOICHIOMETRIC SILICON-NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
JOURNAL OF APPLIED PHYSICS, 70(3), 1553–1560.
1991 patent
Surface modification of boron carbide to form pockets of solid lubricant
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Dry etching of silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Sintered ceramic product
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
Washington, DC: U.S. Patent and Trademark Office.
1991 journal article
THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE
PROCEEDINGS OF THE IEEE, 79(5), 677–701.
1991 journal article
III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS
PROCEEDINGS OF THE IEEE, 79(5), 702–712.
1991 journal article
INVESTIGATION OF A ONE-PARAMETER FAMILY OF HARDENING RULES IN SINGLE SLIP IN FCC CRYSTALS
INTERNATIONAL JOURNAL OF PLASTICITY, 7(6), 477–503.