Materials Science and Engineering

MICROSTRUCTURAL EVOLUTION AND SUBSTRATE SELECTIVITY IN PECVD MU-C-SI

In Microcrystalline Semiconductors : Materials Science & Devices (Vol. 283, pp. 495–500). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1993BY10P00077&KeyUID=WOS:A1993BY10P00077

FEMTOSECOND SPECTROSCOPIC STUDY OF ULTRAFAST CARRIER RELAXATION IN HYDROGENATED AMORPHOUS-SILICON A-SI-H

Journal of Applied Physics, 73(3), 1235–1239.

TRANSPORT-PROPERTIES OF OPTICALLY GENERATED FREE-CARRIERS IN HYDROGENATED AMORPHOUS-SILICON IN THE FEMTOSECOND TIME REGIME

Physical Review B, 47(7), 3593–3597.

Structure and properties of grain boundaries in high-Tc superconductors

In J. Narayan (Ed.), AIP Conference Proceedings (Vol. 273, pp. 37–49).

Evaluation of physical and electrical properties of CoSi2 thin films on (100)Si grown by pulsed laser deposition

Philosophical Magazine B, 68(3), 413–420.

Deformation twinning in high-hydrogen-solubility refractory alloy crystals

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 68(2), 419–451.

Laser processing, characterization, and modeling of epitaxial Si/TiN/Si (100) heterostructures

Materials Research Society Symposium Proceedings, 285, 501–506. http://www.scopus.com/inward/record.url?eid=2-s2.0-0027313965&partnerID=MN8TOARS

Epitaxial growth of TiN on GaAs(100) by pulsed laser deposition

Materials Research Society Symposium Proceedings, 285, 343–348. http://www.scopus.com/inward/record.url?eid=2-s2.0-0027268780&partnerID=MN8TOARS

Epitaxial growth in large lattice mismatch systems: characteristics of domain epitaxy

Materials Research Society Symposium Proceedings, 280, 393–398. http://www.scopus.com/inward/record.url?eid=2-s2.0-0027884438&partnerID=MN8TOARS

ON THE APPLICATION OF THE STATISTICAL STRENGTH MODEL OF FIBER-REINFORCED COMPOSITES

JOURNAL OF COMPOSITE MATERIALS, 27(9), 944–959.

CHEMISTRY OF ELECTRON-DOPED LN2-XCEXCUO4 SUPERCONDUCTORS

JOURNAL OF ELECTRONIC MATERIALS, 22(10), 1195–1198.

Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements

Journal of the Optical Society of America A, 10(5), 974.

Effect of the chemical nature of transition‐metal substrates on chemical‐vapor deposition of diamond

Journal of Applied Physics, 74(6), 4168–4173.

Transport processes of optically generated free carriers in amorphous silicon, a-Si:H in the femtosecond time regime

Physical Review, B(47), 3593.

Optical-detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the subpicosecond time-domain

Journal of Non-Crystalline Solids, 166, 575–578.

Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H

Journal of Applied Physics, 73, 1235.

ENGINEERING CATALYST SURFACES WITH METAL-CARBONYL CLUSTERS

CATALYSIS TODAY, 18(1), 3–19.

Diamond films and coatings development, properties, and applications

Park Ridge, NJ: Noyes Pub.

High temperature rectifying contact

Washington, DC: U.S. Patent and Trademark Office.

Method for synthesis and processing of continuous monocrystalline diamond thin films

Washington, DC: U.S. Patent and Trademark Office.