Materials Science & Engineering

Y and Nb Grain Boundary Segregation in Polycrystalline Titanium Dioxide

Microscopy and Microanalysis, 10(S02), 302–303.

Development of Doped and Heterostructured Si-Ge Nanowires

Microscopy and Microanalysis, 10(S02), 22–23.

HRTEM Study of a New Non-Stoichiometric BaTiO(3-δ) Structure

Microscopy and Microanalysis, 10(S02), 992–993.

Cover Picture: Macromol. Chem. Phys. 18/2004

Macromolecular Chemistry and Physics, 205(18), 2381–2381.

Electronic nanostructures templated on self-assembled DNA scaffolds

Nanotechnology, 15(10), S525–S527.

DNA nanotubes self-assembled from triple-crossover tiles as templates for conductive nanowires

Proceedings of the National Academy of Sciences, 101(3), 717–722.

DNA-Templated Self-Assembly of Protein and Nanoparticle Linear Arrays

Journal of the American Chemical Society, 126(2), 418–419.

Surface-Initiated Polymerization on Nanopatterns Fabricated by Electron-Beam Lithography

Advanced Materials, 16(23-24), 2141–2145.

Properties of Polyelectrolyte Templates Generated by Dip-Pen Nanolithography and Microcontact Printing

Chemistry of Materials, 16(25), 5216–5219.

Encapsulated cells: an atomic force microscopy study

Biomaterials, 25(17), 3655–3662.

Uniform Electrochemical Deposition of Copper onto Self-Assembled Gold Nanoparticles

The Journal of Physical Chemistry B, 108(11), 3535–3539.

Kinetically Controlled Pt Deposition onto Self-Assembled Au Colloids:  Preparation of Au (Core)−Pt (Shell) Nanoparticle Assemblies

Chemistry of Materials, 16(17), 3239–3245.

Deformation potentials of the E1(TO) and E2 modes of InN

Applied Physics Letters, 84(18), 3636–3638.

Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties

Superlattices and Microstructures, 36(4-6), 573–580.

Free-to-bound radiative recombination in highly conducting InN epitaxial layers

Superlattices and Microstructures, 36(4-6), 563–571.

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Journal of Crystal Growth, 273(1-2), 118–128.

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

Journal of Electronic Materials, 33(5), 389–394.

Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN

Physica Status Solidi (b), 241(7), R27–R29.

Optical investigation of AlGaN/GaN quantum wells and superlattices

Physica Status Solidi (a), 201(10), 2251–2258.

Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices

Physica Status Solidi (a), 201(10), 2265–2270.