2000 journal article
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
IEEE ELECTRON DEVICE LETTERS, 21(4), 170β172.
1998 article
Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs
RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163β170.
1998 journal article
Ultrathin oxide-nitride gate dielectric MOSFET's
IEEE ELECTRON DEVICE LETTERS, 19(4), 106β108.