Works (3)

Updated: July 5th, 2023 16:03

2000 article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

Wang, N. Z., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N. N., Misra, V., & Hauser, J. R. (2000, April 1). IEEE Electron Device Letters.

By: N. Wang n, C. Parker n, D. Hodge n, R. Croswell n, N. Yang n, V. Misra n, J. Hauser n

author keywords: Fermi level; flatband voltage; interface; ON
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1998 article

Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs

Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, J. R. (1998, January 1). MRS Proceedings.

By: A. Srivastava n, H. Heinisch n, E. Vogel n, C. Parker n, C. Osburn n, N. Masnari n, J. Wortman n, J. Hauser n

Ed(s):

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1998 article

Ultrathin oxide-nitride gate dielectric MOSFET's

Parker, C. G., Lucovsky, G., & Hauser, J. R. (1998, April 1). IEEE Electron Device Letters.

By: C. Parker n, G. Lucovsky n & J. Hauser n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
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Source: Web Of Science
Added: August 6, 2018

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