Works (3)

2000 journal article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE Electron Device Letters, 21(4), 170–172.

By: Z. Wang, C. Parker, D. Hodge, R. Croswell, N. Yang, V. Misra, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs

Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.

By: A. Srivastava, H. Heinisch, E. Vogel, C. Parker, C. Osburn, N. Masnari, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE Electron Device Letters, 19(4), 106–108.

By: C. Parker, G. Lucovsky & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018