Chris G. Parker

Works (3)

Updated: July 5th, 2023 16:03

2000 journal article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

By: Z. Wang n, C. Parker*, D. Hodge*, R. Croswell*, N. Yang*, V. Misra, . Hauser

author keywords: Fermi level; flatband voltage; interface; ON
Source: Web Of Science
Added: August 6, 2018

1998 article

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.

By: A. Srivastava n, H. Heinisch n, E. Vogel n, C. Parker n, C. Osburn n, N. Masnari n, J. Wortman n, . Hauser  n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108.

By: C. Parker n, G. Lucovsky n & . Hauser n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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