Works (3)
2000 article
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
Wang, N. Z., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N. N., Misra, V., & Hauser, J. R. (2000, April 1). IEEE Electron Device Letters.
1998 article
Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs
Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, J. R. (1998, January 1). MRS Proceedings.
Ed(s):
1998 article
Ultrathin oxide-nitride gate dielectric MOSFET's
Parker, C. G., Lucovsky, G., & Hauser, J. R. (1998, April 1). IEEE Electron Device Letters.