2000 journal article
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
IEEE Electron Device Letters, 21(4), 170–172.
1998 conference paper
Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs
Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.
1998 journal article
Ultrathin oxide-nitride gate dielectric MOSFET's
IEEE Electron Device Letters, 19(4), 106–108.
