Works (3)

2000 journal article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

author keywords: Fermi level; flatband voltage; interface; ON
Source: Web Of Science
Added: August 6, 2018

1998 article

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.

By: A. Srivastava, H. Heinisch n, E. Vogel, C. Parker, C. Osburn, N. Masnari, J. Wortman, . Hauser n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108.

By: C. Parker, G. Lucovsky & . Hauser n

Source: Web Of Science
Added: August 6, 2018