2004 journal article
A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices
Microelectronic Engineering, 72(04-Jan), 257–262.
2004 journal article
A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys
Surface Science, 566(Sep 20 2004), 772–776.
2004 journal article
A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys
Applied Surface Science, 234(37990), 429–433.
2004 journal article
Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity
Microelectronic Engineering, 72(04-Jan), 304–309.
2004 journal article
Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(3), 445–451.
2004 journal article
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers
Surface Science, 566(Sep 20 2004), 1185–1189.
2004 journal article
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Applied Surface Science, 234(37990), 240–245.
2004 journal article
Nitrogen bonding, stability, and transport in AlON films on Si
Applied Physics Letters, 84(24), 4992–4994.
2004 journal article
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
Applied Physics Letters, 84(23), 4629–4631.
2004 journal article
Thermal stability of plasma-nitrided aluminum oxide films on Si
Applied Physics Letters, 84(1), 97–99.
2003 journal article
Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3
Applied Surface Science, 216(04-Jan), 124–132.
2002 journal article
Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices
Solid-State Electronics, 46(11), 1799–1805.
2002 journal article
Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.