Christopher Hinkle

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Microelectronic Engineering, 72(04-Jan), 257–262.

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Surface Science, 566(Sep 20 2004), 772–776.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Applied Surface Science, 234(37990), 429–433.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Microelectronic Engineering, 72(04-Jan), 304–309.

Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(3), 445–451.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Surface Science, 566(Sep 20 2004), 1185–1189.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

Nitrogen bonding, stability, and transport in AlON films on Si

Applied Physics Letters, 84(24), 4992–4994.

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Applied Physics Letters, 84(23), 4629–4631.

Thermal stability of plasma-nitrided aluminum oxide films on Si

Applied Physics Letters, 84(1), 97–99.

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

Applied Surface Science, 216(04-Jan), 124–132.

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Solid-State Electronics, 46(11), 1799–1805.

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.