Works (13)

Updated: July 5th, 2023 15:59

2004 article

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262.

By: C. Hinkle n, C. Fulton n, R. Nemanich n & G. Lucovsky n

author keywords: high-K dielectrics; direct tunneling; tunneling mass-conduction band offset energy product; stacked gate dielectrics
Source: Web Of Science
Added: August 6, 2018

2004 article

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 772–776.

By: G. Lucovsky*, G. Rayner*, D. Kang*, C. Hinkle* & J. Hong*

author keywords: dielectric phenomena; crystallization; alloys; surface chemical reaction
Source: Web Of Science
Added: August 6, 2018

2004 article

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433.

By: G. Lucovsky*, G. Rayner*, D. Kang*, C. Hinkle* & J. Hong*

author keywords: high-k dielectrics; chemical phase separation; nano-crystalline phases
Source: Web Of Science
Added: August 6, 2018

2004 article

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309.

By: G. Rayner n, D. Kang n, C. Hinkle n, J. Hong n & G. Lucovsky n

author keywords: high-k dielectrics; chemical phase separation; infrared and X-ray spectroscopy
Source: Web Of Science
Added: August 6, 2018

2004 article

Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451.

By: D. Niu n, R. Ashcraft n, C. Hinkle n & G. Parsons n

Contributors: D. Niu n, R. Ashcraft n, C. Hinkle n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 1185–1189.

By: C. Hinkle n, C. Fulton n, R. Nemanich n & G. Lucovsky n

author keywords: dielectric phenomena; tunneling; metal-oxide semiconductor (MOS) structures; surface electronic phenomena (work function, surface potential, surface states etc.)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Nitrogen bonding, stability, and transport in AlON films on Si

APPLIED PHYSICS LETTERS, 84(24), 4992–4994.

By: G. Soares*, K. Bastos*, R. Pezzi*, L. Miotti*, C. Driemeier*, I. Baumvol*, C. Hinkle n, G. Lucovsky n

co-author countries: Brazil 🇧🇷
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

APPLIED PHYSICS LETTERS, 84(23), 4629–4631.

By: L. Edge*, D. Schlom*, R. Brewer*, Y. Chabal*, . Williams*, S. Chambers*, C. Hinkle n, G. Lucovsky n ...

co-author countries: Germany 🇩🇪
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Thermal stability of plasma-nitrided aluminum oxide films on Si

APPLIED PHYSICS LETTERS, 84(1), 97–99.

By: K. Bastos*, R. Pezzi*, L. Miotti*, G. Soares*, C. Driemeier*, J. Morais*, I. Baumvol*, C. Hinkle n, G. Lucovsky n

co-author countries: Brazil 🇧🇷
Source: Web Of Science
Added: August 6, 2018

2003 article

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

Hinkle, C., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 124–132.

By: C. Hinkle n & G. Lucovsky n

author keywords: remote plasma nitridation; Auger electron spectroscopy; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; zirconium and hafnium silicate alloys; Al2O3
Source: Web Of Science
Added: August 6, 2018

2002 article

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805.

By: R. Johnson*, J. Hong*, C. Hinkle* & G. Lucovsky*

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

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