Christopher Hinkle

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, January 22). Microelectronic Engineering.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 1). Applied Surface Science.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, June 17). Surface Science.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, January 23). Microelectronic Engineering.

Effect of N2 plasma on yttrium oxide and yttrium–oxynitride dielectrics

Niu, D., Ashcraft, R. W., Hinkle, C., & Parsons, G. N. (2004, March 9). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 22, pp. 445–451.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, June 18). Surface Science.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Nitrogen bonding, stability, and transport in AlON films on Si

Soares, G. V., Bastos, K. P., Pezzi, R. P., Miotti, L., Driemeier, C., Baumvol, I. J. R., … Lucovsky, G. (2004, June 1). Applied Physics Letters.

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Edge, L. F., Schlom, D. G., Brewer, R. T., Chabal, Y. J., Williams, J. R., Chambers, S. A., … Schubert, J. (2004, May 21). Applied Physics Letters.

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

Hinkle, C., & Lucovsky, G. (2003, May 19). Applied Surface Science.

Thermal stability of plasma-nitrided aluminum oxide films on Si

Bastos, K. P., Pezzi, R. P., Miotti, L., Soares, G. V., Driemeier, C., Morais, J., … Lucovsky, G. (2003, December 29). Applied Physics Letters.

Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, October 21). Solid-State Electronics.

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.