Kashyap Bellur

Works (7)

Updated: July 5th, 2023 16:04

1998 article

Low parasitic resistance contacts for scaled ULSI devices

Osburn, C. M., & Bellur, K. R. (1998, November 1). Thin Solid Films.

By: C. Osburn n & K. Bellur n

author keywords: contact resistance; ULSI devices; self-aligned silicides; elevated source/drain
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Semiconductor materials and interfaces
Source: Web Of Science
Added: August 6, 2018

1998 article

Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1998, June 1). Journal of The Electrochemical Society.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n, N. Masnari n, R. Westhoff n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Ed(s):

Source: NC State University Libraries
Added: August 6, 2018

1997 article

A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1997, October 1). Journal of The Electrochemical Society.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n, N. Masnari n, R. Westhoff n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Silicon and Solar Cell Technologies
Source: Web Of Science
Added: August 6, 2018

1997 conference paper

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Ed(s):

Source: NC State University Libraries
Added: August 6, 2018

1997 article

The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs

Sun, J. J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., & Masnari, N. A. (1997, January 1). IEEE Transactions on Electron Devices.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n & N. Masnari n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1996 article

Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition

Sun, J., Bartholomew, R. F., Bellur, K., O'Neil, P. A., Srivastava, A., Violette, K. E., … Masnari, N. A. (1996, January 1). MRS Proceedings.

By: J. Sun n, R. Bartholomew n, K. Bellur n, P. O'Neil n, A. Srivastava n, K. Violette n, M. Oztiirk n, C. Osburn n, N. Masnari n

Ed(s):

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Thin-Film Transistor Technologies
Source: Web Of Science
Added: August 6, 2018

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