Works (9)
2001 article
Arsenic Redistribution during Rapid Thermal Chemical Vapor Deposition of TiSi[sub 2] on Si
Fang, H., Öztürk Mehmet C., O’Neil, P. A., & Seebauer, E. G. (2001, January 1). Journal of The Electrochemical Society.
1999 article
Effects of Oxygen during Selective Silicon Epitaxial Growth Using Disilane and Chlorine
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Xu, M., & Maher, D. M. (1999, June 1). Journal of The Electrochemical Society.
1999 article
Effects of oxygen on selective silicon deposition using disilane
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., & Maher, D. M. (1999, March 1). Materials Letters.
1999 article
Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: I. Role of Implanted BF 2
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., Xu, M., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.
1999 article
Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.
1999 article
Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine
O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Xu, M., & Maher, D. M. (1999, June 1). Journal of The Electrochemical Society.
1997 conference paper
A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.
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1997 article
Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine
O'Neil, P. A., Öztürk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. (1997, September 1). Journal of The Electrochemical Society.
1996 article
Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition
Sun, J., Bartholomew, R. F., Bellur, K., O'Neil, P. A., Srivastava, A., Violette, K. E., … Masnari, N. A. (1996, January 1). MRS Proceedings.
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