Patricia A. O'Neil

Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(2), G43–G49.

Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.

Effects of oxygen on selective silicon deposition using disilane

MATERIALS LETTERS, 38(6), 418–422.

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.

Quality of selective silicon epitaxial films deposited using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.