Hyungtak Seo

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 27(1), 294–299.

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

Lee, S., Seo, H., Lucovsky, G., Fleming, L. B., Ulrich, M. D., & Lüning, J. (2008, August 23). Thin Solid Films.

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Chung, K. B., Seo, H., Long, J. P., & Lucovsky, G. (2008, November 3). Applied Physics Letters.

Defect reduction by suppression of π-bonding coupling in nano- and non-crystalline high-(medium)-κ gate dielectrics

Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., & Lüning, J. (2007, May 31). Microelectronic Engineering.

Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., Lüning, J., … Bersuker, G. (2007, April 1). Japanese Journal of Applied Physics.

Length scales for coherent π-bonding interactions in complex high-k oxide dielectrics and their interfaces

Seo, H., Lucovsky, G., Fleming, L. B., Ulrich, M. D., Lüning, J., Koster, G., & Geballe, T. H. (2007, May 31). Microelectronic Engineering.

Spectroscopic studies of O-vacancy defects in transition metal oxides

Lucovsky, G., Lüning, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, March 29). Journal of Materials Science Materials in Electronics.

Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies

Lucovsky, G., Seo, H., Fleming, L. B., Lüning, J., Lysaght, P., & Bersuker, G. (2007, April 30). Surface Science.

Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

Lee, S., Long, J. P., Lucovsky, G., Whitten, J. L., Seo, H., & Lüning, J. (2007, September 4). Microelectronics Reliability, Vol. 48, pp. 364–369.

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

Chen, D. K., Mamouni, F. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December 1). IEEE Transactions on Nuclear Science.

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Lüning, J. (2006, October 18). Radiation Physics and Chemistry.

Suppression of Jahn–Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Lüning, J. (2006, July 19). Radiation Physics and Chemistry, Vol. 76, p. 907.

Characterization of remote inductively coupled CH4-N-2 plasma for carbon nitride thin-film deposition

Journal of Applied Physics, 98(4).

Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD

Kim, J. Y., Kim, S. H., Seo, H., Kim, J.-H., & Jeon, H. (2005, January 1). Electrochemical and Solid-State Letters.

Surface characteristics of indium-tin oxide cleaned by remote plasma

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(2), 1041–1044.