Physics

QCD based quark description of pi-pi scattering up to the sigma and rho regions

Physical Review. D, Particles and Fields, 66(11), 116010–116011.

Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

Electronics Letters, 38(14), 755–756.

Interplay of surface reconstruction and surface electric fields in the optical anisotropy of GaAs(001)

Physical Review. B, Condensed Matter and Materials Physics, 66(8), 085334–085331.

Identification and quantitation of urea precipitates in flexible polyurethane foam formulations by X-ray spectromicroscopy

Macromolecules, 35(15), 5873–5882.

Trends in the carbonyl core (C 1s, O 1s) -> pi*c=o transition in the near-edge X-ray absorption fine structure spectra of organic molecules

Journal of Physical Chemistry. B, Condensed Matter, Materials, Surfaces, Interfaces & Biophysical, 106(34), 8531–8538.

Origins of silicon solar cell passivation by SiNx: H anneal

Journal of Non-Crystalline Solids, 299(2002 Apr 1), 1157–1161.

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE Transactions on Nuclear Science, 49(6), 3045–3050.

Intrinsic electron transport properties of carbon nanotube Y- junctions

Applied Physics Letters, 81(27), 5234–5236.

Effects of surface termination on the band gap of ultrabright Si-29 nanoparticles: Experiments and computational models

Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193406–193401.

Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

Journal of Non-Crystalline Solids, 303(1), 40–49.

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–193101.

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides

Journal of Non-Crystalline Solids, 299(2002 Apr 1), 231–237.

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM Journal of Research and Development, 46(2-3), 299–315.

Total-dose radiation response of hafnium-silicate capacitors

IEEE Transactions on Nuclear Science, 49(6), 3191–3196.

Testing the utility of vertebrate remains in recognizing patterns in fluvial deposits: An example from the lower Horseshoe Canyon Formation, Alberta

Palaios, 17(5), 472–490.

Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials

Journal of Crystal Growth, 246(3-4), 252–258.

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

Journal of Applied Physics, 91(2), 732–738.

Nonlinear particle acceleration in relativistic shocks

Astroparticle Physics, 18(3), 213–228.

Measurements of ultracold-neutron lifetimes in solid deuterium

Physical Review Letters, 89(27), 272501–272501.

Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization

IEEE Journal of Selected Topics in Quantum Electronics, 8(4), 880–890.