Materials Science and Engineering

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.

Optical properties of nonpolar -plane GaN layers

Superlattices and Microstructures, 40(4-6), 253–261.

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Physica B: Condensed Matter, 376-377, 482–485.

Structural defect-related emissions in nonpolar a-plane GaN

Physica B: Condensed Matter, 376-377, 473–476.

Optical signatures of dopants in GaN

Materials Science in Semiconductor Processing, 9(1-3), 168–174.

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physica Status Solidi (c), 3(6), 1499–1502.

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 243(7), 1604–1608.

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.

Electron concentration and mobility profiles in InN layers grown by MBE

Physica Status Solidi (a), 203(7), 1681–1685.

Ion deposition induced modification of carbon nanopeapods: A computational study

Chemical Physics Letters, 422(1-3), 137–141.

Proceedings of the 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005), Toulouse, France, September 11–16, 2005

Diamond and Related Materials, 15(4-8), xi.

Thermal conductivity of AlN-diamond particulate composite films on silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 24(4), 895–899.

Interfacial characterization and residual stress analysis in diamond films on LiNbO <inf>3</inf>

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 24(6), 2105–2112.

Properties of titanium-nitride for high-level waste packaging enhancement

Nuclear Technology, 156(2), 213–221.

Structural and dynamical classification of RNA single-base bulges for nanostructure design

Journal of Computational and Theoretical Nanoscience.