Works (6)

Updated: July 5th, 2023 16:02

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Observation of a magic discrete family of ultrabright Si nanoparticles

APPLIED PHYSICS LETTERS, 80(5), 841–843.

By: G. Belomoin*, J. Therrien*, A. Smith*, S. Rao*, R. Twesten*, S. Chaieb*, M. Nayfeh*, L. Wagner n, L. Mitas n

Source: Web Of Science
Added: August 6, 2018

2000 article

Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519.

By: R. Therrien n, G. Lucovsky n & R. Davis n

author keywords: GaN-dielectric interfaces; remote-plasma processing; interfacial charge redistribution
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.

By: R. Therrien n, H. Niimi n, T. Gehrke n, G. Lucovsky n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796.

By: R. Therrien*, G. Lucovsky n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593.

By: S. King n, E. Carlson n, R. Therrien n, J. Christman n, R. Nemanich n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

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