Robert J. Therrien

Works (6)

Updated: July 5th, 2023 16:02

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Observation of a magic discrete family of ultrabright Si nanoparticles

Belomoin, G., Therrien, J., Smith, A., Rao, S., Twesten, R., Chaieb, S., … Mitas, L. (2002, February 4). Applied Physics Letters, Vol. 80, pp. 841–843.

By: G. Belomoin*, J. Therrien*, A. Smith *, S. Rao *, R. Twesten*, S. Chaieb *, M. Nayfeh *, L. Wagner  n, L. Mitas n 

Contributors: G. Belomoin*, J. Therrien*, A. Smith *, S. Rao *, R. Twesten*, S. Chaieb *, M. Nayfeh *, L. Wagner  n, L. Mitas n 

topics (OpenAlex): Silicon Nanostructures and Photoluminescence; Nanowire Synthesis and Applications; Quantum Dots Synthesis And Properties
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2000 article

Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. (2000, October 1). Applied Surface Science.

By: R. Therrien n, G. Lucovsky n & R. Davis  n

author keywords: GaN-dielectric interfaces; remote-plasma processing; interfacial charge redistribution
topics (OpenAlex): Semiconductor materials and devices; Ga2O3 and related materials; GaN-based semiconductor devices and materials
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 1). Physica Status Solidi (a).

By: R. Therrien n, G. Lucovsky n & R. Davis n

topics (OpenAlex): Semiconductor materials and devices; Ga2O3 and related materials; GaN-based semiconductor devices and materials
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaNGa2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September 1). Microelectronic Engineering.

By: R. Therrien n, H. Niimi n, T. Gehrke n, G. Lucovsky n & R. Davis n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999, November 15). Journal of Applied Physics.

By: S. King n, E. Carlson n, R. Therrien n, J. Christman n, R. Nemanich n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Source: Web Of Science
Added: August 6, 2018

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