Works (6)
Updated: July 5th, 2023 16:02
2008 patent
Gallium nitride material transistors and methods associated with the same
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2002 journal article
Observation of a magic discrete family of ultrabright Si nanoparticles
APPLIED PHYSICS LETTERS, 80(5), 841–843.
Source: Web Of Science
Added: August 6, 2018
2000 article
Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces
Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519.
author keywords: GaN-dielectric interfaces; remote-plasma processing; interfacial charge redistribution
Source: Web Of Science
Added: August 6, 2018
1999 article
Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1999 article
Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796.
Source: Web Of Science
Added: August 6, 2018
1999 journal article
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593.
Source: Web Of Science
Added: August 6, 2018
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