Edwin L. Piner

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Semiconductor device-based sensors

Washington, DC: U.S. Patent and Trademark Office.

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Gallium nitride material devices and methods including backside vias

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride materials and methods

Washington, DC: U.S. Patent and Trademark Office.

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

Phase separation in InGaN grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 72(1), 40–42.

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.