Works (17)

Updated: July 5th, 2023 16:04

2008 patent

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Semiconductor device-based sensors

Washington, DC: U.S. Patent and Trademark Office.

By: J. Johnson, E. Piner & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride material devices and methods including backside vias

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, R. Borges & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride materials and methods

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, T. Gehrke & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.

By: Z. Liliental-Weber, M. Benamara*, J. Washburn*, J. Domagala*, J. Bak-Misiuk*, E. Piner n, J. Roberts n, S. Bedair n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: InGaN; strained layer; relaxed layer; planar defects; TEM; x-rays
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins*, A. Paul*, C. Parker n, J. Roberts n, S. Bedair n, E. Piner n, N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

By: M. Behbehani n, E. Piner n, S. Liu n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Phase separation in InGaN grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 72(1), 40–42.

By: N. El-Masry n, E. Piner n, S. Liu n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

By: E. Piner n, M. Behbehani n, N. ElMasry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. ElMasry n

co-author countries: United States of America 🇺🇸
author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

By: E. Piner n, M. Behbehani n, N. ElMasry n, J. Roberts n, F. McIntosh n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

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