Rohan Sengupta

College of Engineering

Works (3)

Updated: April 28th, 2023 05:00

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID
Added: March 25, 2023

2022 journal article

Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

APPLIED PHYSICS LETTERS, 121(3).

By: R. Sengupta n, S. Dangi n, S. Krylyuk*, A. Davydov* & S. Pavlidis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 1, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

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