Rohan Sengupta

College of Engineering

Works (2)

2022 journal article

Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

APPLIED PHYSICS LETTERS, 121(3).

Source: Web Of Science
Added: August 1, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya, S. Mita, P. Reddy, S. Dangi, J. Dycus*, P. Bagheri, M. Breckenridge n, R. Sengupta ...

Sources: Web Of Science, ORCID
Added: May 31, 2022