Rohan Sengupta
College of Engineering
Works (4)
Updated: September 4th, 2024 05:00
2024 journal article
Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p-n diodes with near-unity ideality factor
APPLIED PHYSICS LETTERS, 125(6).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 26, 2024
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.
Contributors: n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski *, G. Kamler *, P. Reddy* , Z. Sitar n, R. Collazo n , S. Pavlidis n
author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 25, 2023
2022 journal article
Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing
APPLIED PHYSICS LETTERS, 121(3).
open access via aip.scitation.org (publisher PDF)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 1, 2022
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: May 31, 2022
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