Rohan Sengupta
Works (4)
2024 article
Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor
Sengupta, R., Little, B., Mita, S., Markham, K., Dycus, J. H., Stein, S., … Pavlidis, S. (2024, August 5). Applied Physics Letters.
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS Applied Nano Materials, Vol. 3, pp. 5081–5086.
Contributors: n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski *, G. Kamler *, P. Reddy* , Z. Sitar n, R. Collazo n , S. Pavlidis n
2022 article
Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing
Sengupta, R., Dangi, S., Krylyuk, S., Davydov, A. V., & Pavlidis, S. (2022, July 18). Applied Physics Letters.
2022 article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.
Contributors: D. Khachariya n, S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, n