Advanced Self Powered Systems of Sensors and Technologies Center

Recent progress in capacitive micromachined ultrasonic immersion transducer array

Proceedings of the 8th International Symposium on Integrated Circuits, Devices and Systems, 159–162.

Why is the osmotic second virial coefficient related to protein crystallization?

Journal of Crystal Growth, 196(2-4), 377–387. http://www.scopus.com/inward/record.url?eid=2-s2.0-0033513738&partnerID=MN8TOARS

Photochemical micromachining of lysozyme crystals

Advanced Materials, 11(16), 1345–1349.

In situ assembly of colloidal particles into miniaturized biosensors

Langmuir, 15(11), 3693–3698.

Electrokinetic behavior in synthatic process of composite particles

Colloids and Surfaces A: Physicochemical and Engineering Aspects, 159(2-3), 359–371.

A class of porous metallic nanostructures

Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides

Microelectronics Reliability, 39(2), 171–179.

Simulation and experimental characterization of a 2-D capacitive micromachined ultrasonic transducer array element

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 46(6), 1337–1340.

Determination of indigo in dyebaths by flow injection analysis and redox titrations

AATCC Review, 4, 53–57.

Determination of indigo in dyebaths by flow injection analysis and redox titrations

Book of Papers, American Association of Textile Chemists and Colorists. International Conference & Exhibition, 505–513.

A self-organizing fuzzy sliding-mode controller for experimental dyeing process control studies

ISCA 1st international conference, 24–27. Atlanta, Georgia, U.S.A: Cary, NC: ISCA.

In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308.

Effects of arsenic doping on chemical vapor deposition of titanium silicide

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4240–4245.

Effects of oxygen on selective silicon deposition using disilane

MATERIALS LETTERS, 38(6), 418–422.

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

APPLIED PHYSICS LETTERS, 74(14), 2005–2007.

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

Quality of selective silicon epitaxial films deposited using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.