2016 journal article
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers
JOURNAL OF APPLIED PHYSICS, 120(13).
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
JOURNAL OF APPLIED PHYSICS, 120(18).
2016 journal article
Polarity Control in Group-III Nitrides beyond Pragmatism
PHYSICAL REVIEW APPLIED, 5(5).
2016 article
Strain engineered high reflectivity DBRs in the deep UV
GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.
2015 journal article
Optical characterization of Al- and N-polar AlN waveguides for integrated optics
APPLIED PHYSICS EXPRESS, 8(4).
2014 journal article
Adsorption and adhesion of common serum proteins to nanotextured gallium nitride
NANOSCALE, 7(6), 2360–2365.
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
APPLIED PHYSICS LETTERS, 105(22).
2014 article
Growth and characterization of AlxGa1-xN lateral polarity structures
Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.
2014 journal article
Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures
JOURNAL OF APPLIED PHYSICS, 115(4).
2014 article
Properties of AlN based lateral polarity structures
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.
2013 journal article
Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
Journal of Applied Physics, 113(10), 103504.
2013 journal article
Ge doped GaN with controllable high carrier concentration for plasmonic applications
Applied Physics Letters, 103(24), 242107.
2013 journal article
Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy
Journal of Applied Physics, 114(17).
2012 journal article
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.
2012 journal article
On the origin of the 265 nm absorption band in AlN bulk crystals
APPLIED PHYSICS LETTERS, 100(19).
2012 journal article
Optical signature of Mg-doped GaN: Transfer processes
PHYSICAL REVIEW B, 86(7).
conference paper
Fabrication and characterization of lateral polar GaN structures for second harmonic generation
Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.
conference paper
Point defect management in GaN by Fermi-level control during growth
Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.
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