Marc Patrick Hoffmann

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

JOURNAL OF APPLIED PHYSICS, 120(13).

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

Polarity Control in Group-III Nitrides beyond Pragmatism

PHYSICAL REVIEW APPLIED, 5(5).

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

Adsorption and adhesion of common serum proteins to nanotextured gallium nitride

NANOSCALE, 7(6), 2360–2365.

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

APPLIED PHYSICS EXPRESS, 8(4).

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

JOURNAL OF APPLIED PHYSICS, 115(4).

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy

Journal of Applied Physics, 114(17).

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100(19).

Optical signature of Mg-doped GaN: Transfer processes

PHYSICAL REVIEW B, 86(7).

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.