Marc Patrick Hoffmann

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., … Sitar, Z. (2016, October 5). Journal of Applied Physics, Vol. 120.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016, November 14). Journal of Applied Physics, Vol. 120, p. 185704.

Polarity Control in Group-III Nitrides beyond Pragmatism

Mohn, S., Stolyarchuk, N., Markurt, T., Kirste, R., Hoffmann, M. P., Collazo, R., … Albrecht, M. (2016, May 3). Physical Review Applied, Vol. 5.

Strain engineered high reflectivity DBRs in the deep UV

Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016, February 26). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 9748.

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015, March 24). Applied Physics Express, Vol. 8.

Adsorption and adhesion of common serum proteins to nanotextured gallium nitride

Bain, L. E., Hoffmann, M. P., Bryan, I., Collazo, R., & Ivanisevic, A. (2014, December 19). Nanoscale, Vol. 7, pp. 2360–2365.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

Growth and characterization of Al_xGa_1−xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2014, November 18). Physica Status Solidi (a), Vol. 212, pp. 1039–1042.

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

Shelton, C. T., Sachet, E., Paisley, E. A., Hoffmann, M. P., Rajan, J., Collazo, R., … Maria, J.-P. (2014, January 28). Journal of Applied Physics, Vol. 115.

Properties of AlN based lateral polarity structures

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014, January 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 261–264.

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy

Journal of Applied Physics, 114(17).

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.

On the origin of the 265 nm absorption band in AlN bulk crystals

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012, May 7). Applied Physics Letters, Vol. 100.

Optical signature of Mg-doped GaN: Transfer processes

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Bügler, M., Brunnmeier, J., … Sitar, Z. (2012, August 23). Physical Review B, Vol. 86.

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.