Works (18)

2016 journal article

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

Journal of Applied Physics, 120(13).

By: A. Franke, M. Hoffmann, R. Kirste, M. Bobea, J. Tweedie, F. Kaess, M. Gerhold, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18).

By: P. Reddy, M. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Polarity control in group-III nitrides beyond pragmatism

Physical Review Applied, 5(5).

By: S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. Hoffmann, R. Collazo, A. Courville, R. Di Felice ...

Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

Strain engineered high reflectivity DBRs in the deep UV

Gallium nitride materials and devices xi, 9748.

By: A. Franke, P. Hoffmann, L. Hernandez-Balderrama, F. Kaess, I. Bryan, S. Washiyama, M. Bobea, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Adsorption and adhesion of common serum proteins to nanotextured gallium nitride

Nanoscale, 7(6), 2360–2365.

By: L. Bain, M. Hoffmann, I. Bryan, R. Collazo & A. Ivanisevic

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Growth and characterization of AlxGa1-xN lateral polarity structures

Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.

By: M. Hoffmann, R. Kirste, S. Mita, W. Guo, J. Tweedie, M. Bobea, I. Bryan, Z. Bryan ...

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Optical characterization of Al- and N-polar AlN waveguides for integrated optics

Applied Physics Express, 8(4).

By: M. Rigler, J. Buh, M. Hoffmann, R. Kirste, M. Bobea, S. Mita, M. Gerhold, R. Collazo, Z. Sitar, M. Zgonik

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22).

By: Z. Bryan, I. Bryan, B. Gaddy, P. Reddy, L. Hussey, M. Bobea, W. Guo, M. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

Journal of Applied Physics, 115(4).

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

Properties of AlN based lateral polarity structures

Physica status solidi c: current topics in solid state physics, vol 11, no 2, 11(2), 261–264.

By: R. Kirste, S. Mita, M. Hoffmann, L. Hussey, W. Guo, I. Bryan, Z. Bryan, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10).

By: R. Kirste, M. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. Wagner ...

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Fermi level control of point defects during growth of Mg-doped GaN

Journal of Electronic Materials, 42(5), 815–819.

By: Z. Bryan, M. Hoffmann, J. Tweedie, R. Kirste, G. Callsen, I. Bryan, A. Rice, M. Bobea ...

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24).

By: R. Kirste, M. Hoffmann, E. Sachet, M. Bobea, Z. Bryan, I. Bryan, C. Nenstiel, A. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy

Journal of Applied Physics, 114(17).

By: D. Skuridina, D. Dinh, B. Lacroix, P. Ruterana, M. Hoffmann, Z. Sitar, M. Pristovsek, M. Kneissl, P. Vogt

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

On the origin of the 265 nm absorption band in AlN bulk crystals

Applied Physics Letters, 100(19).

By: R. Collazo, J. Xie, B. Gaddy, Z. Bryan, R. Kirste, M. Hoffmann, R. Dalmau, B. Moody ...

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Optical signature of Mg-doped GaN: Transfer processes

Physical Review. B, Condensed Matter and Materials Physics, 86(7).

By: G. Callsen, M. Wagner, T. Kure, J. Reparaz, M. Bugler, J. Brunnmeier, C. Nenstiel, A. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.

By: M. Hoffmann, J. Tweedie, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, Z. Sitar, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018