Power Semiconductor Research Center

Works Published in 2001

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Displaying all 3 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2001 patent

Superior silicon carbide integrated circuits and method of fabricating

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Self-aligned silicon carbide LMOSFET

Washington, DC: U.S. Patent and Trademark Office.

By: D. Alok

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

The future of power semiconductor device technology

PROCEEDINGS OF THE IEEE, 89(6), 822–832.

By: B. Baliga n

co-author countries: United States of America 🇺🇸
author keywords: insulated gate bipolar transistors; MOSFETs; power electronics; power integrated circuits; power rectifiers; power semi-conductor devices; Schottky diodes; silicon carbide; smart power technology; thyristors
Source: Web Of Science
Added: August 6, 2018

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