Works Published in 2001
Displaying all 3 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2001 patent
Superior silicon carbide integrated circuits and method of fabricating
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2001 patent
Self-aligned silicon carbide LMOSFET
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2001 journal article
The future of power semiconductor device technology
PROCEEDINGS OF THE IEEE, 89(6), 822–832.
author keywords: insulated gate bipolar transistors; MOSFETs; power electronics; power integrated circuits; power rectifiers; power semi-conductor devices; Schottky diodes; silicon carbide; smart power technology; thyristors
TL;DR:
Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions, and silicon IGBTs continue to dominate the medium- and high-voltage application space sue to scaling of their voltage ratings and refinements to their gate structure achieve by using very large scale integration (VLSI) technology and trench gate regions.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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