Power Semiconductor Research Center

Works Published in 2016

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2016 journal article

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme

IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608.

By: W. Sung * & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; JBS diode; JBSFET; Schottky contact; ohmic contact
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2016 journal article

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612.

By: W. Sung * & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; edge termination; junction termination extension; floating field rings
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2016 conference paper

SIC power devices: From conception to social impact (invited paper)

2016 46th european solid-state device research conference (essderc), 192–197.

By: B. Baliga n

TL;DR: This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. (via Semantic Scholar)
Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.

By: W. Sung n, B. Baliga  n & A. Huang n

author keywords: 4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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