College of Engineering
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Displaying all 4 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2016 journal article
Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single Ohmic/Schottky process scheme
IEEE Electron Device Letters, 37(12), 1605–1608.
By: W. Sung & B. Baliga
A Near Ideal edge termination technique for 4500V 4H-SiC devices: The hybrid junction termination extension
IEEE Electron Device Letters, 37(12), 1609–1612.
2016 conference paper
SIC power devices: From conception to social impact (invited paper)
2016 46th european solid-state device research conference (essderc), 192–197.
By: B. Baliga
Area-efficient bevel-edge termination techniques for SiC high-voltage devices
IEEE Transactions on Electron Devices, 63(4), 1630–1636.
By: W. Sung, B. Baliga & A. Huang