Power Semiconductor Research Center

Works Published in 2016

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2016 journal article

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme

IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608.

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; 4H-SiC; MOSFET; JBS diode; JBSFET; Schottky contact; ohmic contact
Source: Web Of Science
Added: August 6, 2018

2016 journal article

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612.

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; 4H-SiC; edge termination; junction termination extension; floating field rings
Source: Web Of Science
Added: August 6, 2018

2016 conference paper

SIC power devices: From conception to social impact (invited paper)

2016 46th european solid-state device research conference (essderc), 192–197.

By: B. Baliga n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
Source: Web Of Science
Added: August 6, 2018

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