Power Semiconductor Research Center
College of Engineering
Works Published in 2016
Displaying all 4 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2016 journal article
Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608.
author keywords: Silicon carbide; 4H-SiC; MOSFET; JBS diode; JBSFET; Schottky contact; ohmic contact
doi.org (publisher)
Source: Web Of Science
Added: August 6, 2018
2016 journal article
A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612.
author keywords: Silicon carbide; 4H-SiC; edge termination; junction termination extension; floating field rings
Source: Web Of Science
Added: August 6, 2018
2016 conference paper
SIC power devices: From conception to social impact (invited paper)
2016 46th european solid-state device research conference (essderc), 192–197.
Source: NC State University Libraries
Added: August 6, 2018
2016 journal article
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices
IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.
author keywords: 4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
Source: Web Of Science
Added: August 6, 2018
