Power Semiconductor Research Center

Works Published in 2013

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2013 conference paper

SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension

Proceedings of the international symposium on power semiconductor, 179–182.

By: X. Huang n, B. Baliga n, A. Huang n, A. Suvorov, C. Capell*, L. Cheng*, A. Agarwal*

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2013 review

Gallium nitride devices for power electronic applications

[Review of ]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.

By: X. Huang n, G. Wang n, Y. Li n, A. Huang n & B. Baliga n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Analytical Modeling of IGBTs: Challenges and Solutions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 535–543.

By: B. Baliga n

co-author countries: United States of America 🇺🇸
author keywords: Blocking; insulated-gate bipolar transistor (IGBT); modeling; ON state; safe operating area; silicon carbide; switching
Source: Web Of Science
Added: August 6, 2018

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