Physics

Mixed finite element-tight-binding electromechanical analysis of carbon nanotubes

JOURNAL OF APPLIED PHYSICS, 96(11), 6756–6760.

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138.

The Majorana neutrinoless double-beta decay experiment

PHYSICS OF ATOMIC NUCLEI, 67(11), 2002–2010.

Surveillance on the light-front gauge-fixing Lagrangians

MODERN PHYSICS LETTERS A, 19(25), 1925–1931.

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680.

Role of thin Fe catalyst in the synthesis of double- and single-wall carbon nanotubes via microwave chemical vapor deposition

APPLIED PHYSICS LETTERS, 85(13), 2601–2603.

Polarization-dependent electron affinity of LiNbO3 surfaces

APPLIED PHYSICS LETTERS, 85(12), 2316–2318.

Neutrino-lead cross section measurements using stopped pions and low energy beta beams

PHYSICAL REVIEW C, 70(4).

Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2000–2004.

Large enhancement of radiative strength for soft transitions in the quasicontinuum

PHYSICAL REVIEW LETTERS, 93(14).

Isospin symmetry brealdng in Tc-93 and statistical properties

Physics Letters. B, 598(02-Jan), 42–46.

Investigating the parity of the exotic Theta(+) baryon from kaon photoproduction

PHYSICAL REVIEW C, 70(4).

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2097–2104.

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2087–2096.

Interface instabilities and electronic properties of ZrO2 on silicon (100)

JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673.

Effect of bound dineutrons upon big bang nucleosynthesis

PHYSICAL REVIEW D, 70(4).

Diffusive shock acceleration in unmodified relativistic, oblique shocks

ASTROPARTICLE PHYSICS, 22(3-4), 323–338.

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

Thermal stability of plasma-nitrided aluminum oxide films on Si

APPLIED PHYSICS LETTERS, 84(1), 97–99.

Statistical behavior and symmetry tests

Mitchell, G. E., & Shriner, J. F. (2004, September). BRAZILIAN JOURNAL OF PHYSICS, Vol. 34, pp. 796–799.