Displaying all 3 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1991 chapter
COMPOSITION AND PROPERTIES OF PECVD SILICON-NITRIDE FILMS DEPOSITED FROM SIH4, N-2, HE GASES
In Amorphous Silicon Technology - 1991 (Vol. 219, pp. 787–792).
Contributors: J. Souk*, G. Parsons* , J. Batey*, A. Madan, Y. Hamakawa, M. Thompson, P. Taylor, P. Lecomber
1991 journal article
SELECTIVE DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING PULSED SILANE FLOW
APPLIED PHYSICS LETTERS, 59(20), 2546–2548.
Contributors: G. Parsons*
1991 journal article
LOW HYDROGEN CONTENT STOICHIOMETRIC SILICON-NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
JOURNAL OF APPLIED PHYSICS, 70(3), 1553–1560.
Contributors: G. Parsons* , J. Souk* & J. Batey*
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